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GS8128236GB-200IV PDF预览

GS8128236GB-200IV

更新时间： 2024-11-11 15:43:15
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
34页 600K
描述
Cache SRAM, 4MX36, CMOS, PBGA119, BGA-119

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GS8128236GB-200IV 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：BGA,Reach Compliance Code：compliant
ECCN代码：3A991.B.2.BHTS代码：8542.32.00.41
风险等级：5.67其他特性：IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE
JESD-30 代码：R-PBGA-B119长度：22 mm
内存密度：150994944 bit内存集成电路类型：CACHE SRAM
内存宽度：36功能数量：1
端子数量：119字数：4194304 words
字数代码：4000000工作模式：SYNCHRONOUS
组织：4MX36封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装形状：RECTANGULAR
封装形式：GRID ARRAY并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED座面最大高度：1.99 mm
最大供电电压 (Vsup)：2 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS端子形式：BALL
端子节距：1.27 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

GS8128236GB-200IV 数据手册

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Preliminary  
GS8128218/36(GB/GD)-xxxV  
119- & 165-Bump BGA  
Commercial Temp  
Industrial Temp  
333 MHz–200 MHz  
8M x 18, 4M x 36  
144Mb S/DCD Sync Burst SRAMs  
1.8 V or 2.5 V V  
DD  
1.8 V or 2.5 V I/O  
Flow Through/Pipeline Reads  
Features  
The function of the Data Output register can be controlled by the  
user via the FT mode . Holding the FT mode pin low places the  
RAM in Flow Through mode, causing output data to bypass the  
Data Output Register. Holding FT high places the RAM in  
Pipeline mode, activating the rising-edge-triggered Data Output  
Register.  
• FT pin for user-configurable flow through or pipeline operation  
• Single/Dual Cycle Deselect selectable  
• IEEE 1149.1 JTAG-compatible Boundary Scan  
• ZQ mode pin for user-selectable high/low output drive  
• 1.8 V +10%/–10% core power supply  
• 2.5 V +10%/–10% core power supply  
• 1.8 V or 2.5 V I/O supply  
SCD and DCD Pipelined Reads  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to SCD x18/x36 Interleaved Pipeline mode  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
The GS8128218/36 is a SCD (Single Cycle Deselect) and DCD  
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD  
SRAMs pipeline disable commands to the same degree as read  
commands. SCD SRAMs pipeline deselect commands one stage  
less than read commands. SCD RAMs begin turning off their  
outputs immediately after the deselect command has been  
captured in the input registers. DCD RAMs hold the deselect  
command for one full cycle and then begin turning off their  
outputs just after the second rising edge of clock. The user may  
configure this SRAM for either mode of operation using the SCD  
mode input.  
• ZZ pin for automatic power-down  
• RoHS-compliant 119-bump and 165-bump BGA packages  
Functional Description  
Applications  
The GS8128218/36 is a 150,994,944-bit high performance  
synchronous SRAM with a 2-bit burst address counter. Although  
of a type originally developed for Level 2 Cache applications  
supporting high performance CPUs, the device now finds  
application in synchronous SRAM applications, ranging from  
DSP main store to networking chip set support.  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write control  
inputs.  
Controls  
Addresses, data I/Os, chip enable (E1), address burst control  
FLXDrive™  
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,  
GW) are synchronous and are controlled by a positive-edge-  
triggered clock input (CK). Output enable (G) and power down  
control (ZZ) are asynchronous inputs. Burst cycles can be initiated  
with either ADSP or ADSC inputs. In Burst mode, subsequent  
burst addresses are generated internally and are controlled by  
ADV. The burst address counter may be configured to count in  
either linear or interleave order with the Linear Burst Order (LBO)  
input. The Burst function need not be used. New addresses can be  
loaded on every cycle with no degradation of chip performance.  
The ZQ pin allows selection between high drive strength (ZQ low)  
for multi-drop bus applications and normal drive strength (ZQ  
floating or high) point-to-point applications. See the Output Driver  
Characteristics chart for details.  
Core and Interface Voltages  
The GS8128218/36 operates on a 1.8 V or 2.5 V power supply.  
All input are 1.8 V or 2.5 V compatible. Separate output power  
(VDDQ) pins are used to decouple output noise from the internal  
circuits and are 1.8 V or 2.5 V compatible.  
Parameter Synopsis  
-333  
2.5  
3.0  
-250  
-200  
Unit  
tKQ  
tCycle  
2.5  
4.0  
3.0  
5.0  
ns  
ns  
Pipeline  
3-1-1-1  
Curr (x18)  
Curr (x36)  
565  
660  
445  
520  
380  
440  
mA  
mA  
tKQ  
tCycle  
4.5  
4.5  
5.5  
5.5  
6.5  
6.5  
ns  
ns  
Flow Through  
2-1-1-1  
Curr (x18)  
Curr (x36)  
415  
485  
350  
390  
305  
355  
mA  
mA  
Rev: 1.00 9/2015  
1/34  
© 2015, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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