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GS74108GJ-15I PDF预览

GS74108GJ-15I

更新时间: 2024-10-02 08:24:11
品牌 Logo 应用领域
GSI 静态存储器光电二极管
页数 文件大小 规格书
12页 241K
描述
Standard SRAM, 512KX8, 15ns, CMOS, PDSO36, 0.400 INCH, SOJ-36

GS74108GJ-15I 数据手册

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GS74108TP/J  
SOJ, TSOP  
Commercial Temp  
Industrial Temp  
8, 10, 12, 15ns  
3.3V VDD  
Center VDD & VSS  
512K x 8  
4Mb Asynchronous SRAM  
SOJ 512K x 8 Pin Configuration  
Features  
• Fast access time: 8, 10, 12, 15ns  
• CMOS low power operation: 150/125/110/90 mA at min. cycle time.  
• Single 3.3V ± 0.3V power supply  
• All inputs and outputs are TTL compatible  
• Fully static operation  
36  
1
A4  
NC  
35  
A5  
2
A3  
34  
A6  
3
A2  
33  
A7  
4
A1  
32  
A8  
5
A0  
• Industrial Temperature Option: -40° to 85°C  
• Package line up  
31  
6
CE  
OE  
30  
J: 400mil, 36 pin SOJ package  
TP: 400mil, 44 pin TSOP Type II package  
7
DQ1  
DQ2  
VDD  
VSS  
DQ3  
DQ4  
WE  
A17  
A16  
A15  
A14  
A13  
DQ8  
29  
8
DQ7  
36 pin  
28  
9
VSS  
400mil SOJ  
27  
Description  
10  
11  
12  
13  
14  
15  
16  
17  
18  
VDD  
26  
DQ6  
The GS74108 is a high speed CMOS static RAM organized as  
524,288-words by 8-bits. Static design eliminates the need for exter-  
nal clocks or timing strobes. Operating on a single 3.3V power supply  
and all inputs and outputs are TTL compatible. The GS74108 is avail-  
able in 400 mil SOJ and 400 mil TSOP Type-II packages.  
25  
DQ5  
24  
A9  
23  
A10  
22  
A11  
21  
A12  
20  
19  
A18  
NC  
Pin Descriptions  
Symbol  
A0 to A18  
Description  
Address input  
DQ1 to DQ8  
CE  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3V power supply  
Ground  
WE  
OE  
VDD  
VSS  
NC  
No connect  
Rev: 1.06 7/2000  
1/12  
© 1999, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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