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GS71108AU-10I PDF预览

GS71108AU-10I

更新时间: 2024-11-07 18:46:27
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
11页 419K
描述
Standard SRAM, 128KX8, 10ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48

GS71108AU-10I 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41Factory Lead Time:6 weeks
风险等级:5.2最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:8 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:48
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.005 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.085 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

GS71108AU-10I 数据手册

 浏览型号GS71108AU-10I的Datasheet PDF文件第2页浏览型号GS71108AU-10I的Datasheet PDF文件第3页浏览型号GS71108AU-10I的Datasheet PDF文件第4页浏览型号GS71108AU-10I的Datasheet PDF文件第5页浏览型号GS71108AU-10I的Datasheet PDF文件第6页浏览型号GS71108AU-10I的Datasheet PDF文件第7页 
GS71108AU  
7, 8, 10, 12 ns  
FP-BGA  
Commercial Temp  
Industrial Temp  
128K x 8  
1Mb Asynchronous SRAM  
3.3 V V  
DD  
Center V and V  
DD  
SS  
Features  
Fine Pitch BGA 128K x 8-Bump Configuration  
• Fast access time: 7, 8, 10, 12 ns  
• CMOS low power operation: 140/120/95/80 mA at minimum  
cycle time  
• Single 3.3 V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
1
2
3
4
5
6
A
B
C
D
NC  
OE  
A2  
A1  
A0  
NC  
A6  
A5  
A4  
A3  
A7  
NC  
DQ1 NC  
DQ2 NC  
CE DQ8  
NC DQ7  
• Industrial Temperature Option: 40° to 85°C  
• Package line up  
VSS  
VDD  
VDD  
VSS  
NC  
NC  
NC  
NC  
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package  
GU: RoHS-compliant 6 mm x 8 mm Fine Pitch Ball Grid  
Array package  
E
F
NC  
A14  
A15  
A16  
NC  
DQ3 NC  
DQ4 NC  
A11 DQ5 DQ6  
Description  
G
H
A12  
A13  
WE  
A9  
A8  
The GS71108A is a high speed CMOS Static RAM organized  
as 131,072 words by 8 bits. Static design eliminates the need  
for external clocks or timing strobes. The GS 71108 operates  
on a single 3.3 V power supply and all inputs and outputs are  
TTL-compatible. The GS71108A is available in the 6 mm x 8  
mm Fine Pitch BGA package.  
NC  
A10  
NC  
Package U  
6 mm x 8 mm, 0.75 mm Bump Pitch  
Top View  
Pin Descriptions  
Symbol  
A0A16  
DQ1DQ8  
CE  
Description  
Address input  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3 V power supply  
WE  
OE  
V
DD  
V
Ground  
SS  
NC  
No connect  
Rev: 1.10a 3/2011  
1/11  
© 2001, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

GS71108AU-10I 替代型号

型号 品牌 替代类型 描述 数据表
GS71108AU-10 GSI

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Standard SRAM, 128KX8, 10ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48
GS71108AGU-10I GSI

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Standard SRAM, 128KX8, 10ns, CMOS, PBGA48, 6 X 8 MM, ROHS COMPLIANT, 0.75 MM PITCH, FBGA-4
GS71108AGU-10 GSI

功能相似

Standard SRAM, 128KX8, 10ns, CMOS, PBGA48, 6 X 8 MM, ROHS COMPLIANT, 0.75 MM PITCH, FBGA-4

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