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GS71108ATP-6T PDF预览

GS71108ATP-6T

更新时间: 2024-11-07 15:33:23
品牌 Logo 应用领域
GSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 466K
描述
Standard SRAM, 128KX8, 6ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32

GS71108ATP-6T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:32Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.78最长访问时间:6 ns
JESD-30 代码:R-PDSO-G32长度:20.95 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

GS71108ATP-6T 数据手册

 浏览型号GS71108ATP-6T的Datasheet PDF文件第2页浏览型号GS71108ATP-6T的Datasheet PDF文件第3页浏览型号GS71108ATP-6T的Datasheet PDF文件第4页浏览型号GS71108ATP-6T的Datasheet PDF文件第5页浏览型号GS71108ATP-6T的Datasheet PDF文件第6页浏览型号GS71108ATP-6T的Datasheet PDF文件第7页 
GS71108ATP/J/SJ/U  
6, 8, 10, 12 ns  
SOJ, TSOP, FP-BGA  
Commercial Temp  
Industrial Temp  
128K x 8  
1Mb Asynchronous SRAM  
3.3 V V  
DD  
Center V and V  
DD  
SS  
SOJ & TSOP-II 128K x 8-Pin Configuration  
Features  
• Fast access time: 6, 8, 10, 12 ns  
• CMOS low power operation: 160/120/95/80 mA at minimum  
cycle time  
• Single 3.3 V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
1
A3  
A4  
2
A2  
A5  
3
A1  
A6  
4
A0  
A7  
5
CE  
DQ1  
DQ2  
OE  
DQ8  
DQ7  
32-pin  
400 mil SOJ  
&
6
• Industrial Temperature Option: 40° to 85°C  
• Package line up  
7
8
V
V
V
V
DD  
SS  
SS  
J: 400 mil, 32-pin SOJ package  
9
DD  
300 mil SOJ  
&
TP: 400 mil, 32-pin TSOP Type II package  
SJ: 300 mil, 32-pin SOJ package  
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package  
10  
11  
12  
13  
14  
15  
16  
DQ3  
DQ4  
WE  
A16  
A15  
A14  
A13  
DQ6  
DQ5  
A8  
400 mil TSOP II  
A9  
Description  
A10  
A11  
A12  
The GS71108A is a high speed CMOS Static RAM organized  
as 131,072 words by 8 bits. Static design eliminates the need  
for external clocks or timing strobes. The GS operates on a  
single 3.3 V power supply and all inputs and outputs are TTL-  
compatible. The GS71108A is available in a 6 mm x 8 mm  
Fine Pitch BGA package, as well as in 300 mil and 400 mil  
SOJ and 400 mil TSOP Type-II packages.  
Packages J, TP, and SJ  
Fine Pitch BGA 128K x 8-Bump Configuration  
1
2
3
4
5
6
A
B
C
D
NC  
OE  
A2  
A1  
A0  
NC  
A6  
A5  
A4  
A3  
A7  
CE  
NC  
DQ8  
Pin Descriptions  
DQ1 NC  
DQ2 NC  
Symbol  
A0A16  
DQ1DQ8  
CE  
Description  
Address input  
NC DQ7  
Data input/output  
Chip enable input  
Write enable input  
Output enable input  
+3.3 V power supply  
VSS  
VDD  
VDD  
VSS  
NC  
NC  
NC  
NC  
E
F
NC  
A14  
A15  
A16  
NC  
WE  
DQ3 NC  
DQ4 NC  
A11 DQ5 DQ6  
OE  
VDD  
G
H
A12  
A13  
WE  
A9  
A8  
VSS  
NC  
Ground  
NC  
A10  
NC  
No connect  
Package U  
6 mm x 8 mm, 0.75 mm Bump Pitch  
Top View  
Rev: 1.03 3/2002  
1/15  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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