Datasheet > GS4953

GS4953

更新时间： 2022-09-23 10:05:04

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GS4953 数据手册

Gem micro

GS4953

Pb free

semiconductor Inc.

Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)

PRODUCT SUMMARY

VDSS

RDS(on) (m-ohm) Max

60 @ VGS = -10V, ID=-5.3A

90 @ VGS = -4.5V,ID=-3.9A

-30V

-5.3A

Features

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Lead free product is acquired

• Surface mount Package

Pin 1: Source 2

Pin 2: Gate 2

•

Pin 3: Source 1

Pin 4: Gate 1

Pin 5 / 6: Drain 1

Pin 7 / 8: Drain 2

SOP-8

Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)

Symbol

V_DS

V_GS

I_D

Parameter

Ratings

-30

Units

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current (Continuous)

Drain Current (Pulsed) ^a

-5.3

I_DM

-20

P_D

Total Power Dissipation @T_A=25^oC

2.0

I_S

Maximum Diode Forward Current

-1.9

T_j, T_stg

Operating Junction and Storage Temperature Range

Thermal Resistance Junction to Ambient (PCB mounted)^b

-55 to +150

°C

°C/W

R_θ

a: Repetitive Rating: Pulse width limited by the maximum junction temperation.

b: 1-in²2oz Cu PCB board

DS-GS4953-REV00

Aa1

12 3 4

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