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GS2BBF

更新时间: 2024-10-02 01:25:55
品牌 Logo 应用领域
辰达行 - MDD /
页数 文件大小 规格书
2页 615K
描述
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER

GS2BBF 数据手册

 浏览型号GS2BBF的Datasheet PDF文件第2页 
GS2ABF THRU GS2MBF  
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts Forward Current -  
2.0 Amperes  
SMBF  
FEATURES  
Cathode Band  
Top View  
For surface mounted applications  
Low profile package  
0.146(3.70)  
0.138(3.50)  
0.086(2.20)  
0.075(1.90)  
Glass Passivated Chip Junction  
Easy to pick and place  
Lead free in comply with EU RoHS 2011/65/EU diretives  
0.173(4.4)  
0.165(4.2)  
0.010(0.26)  
0.0071(0.18)  
0.051(1.30)  
0.043(1.10)  
0.051(1.30)  
0.039(1.0)  
MECHANICAL DATA  
Case: JEDEC SMBF molded plastic body  
Terminals: leads solderable per MIL-STD-750,  
Method 2026  
Mounting Position: Any  
Weight:57mg/0.002oz  
0.216(5.5)  
0.200(5.1)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
GS2ABF GS2BBF GS2DBF GS2GBF GS2JBF GS2KBF GS2MBF  
UNITS  
MDD Catalog  
Number  
S2AB  
S2BB  
S2DB  
S2GB  
S2JB  
S2KB  
S2MB  
Marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VOLTS  
VOLTS  
VOLTS  
VRMS  
VDC  
100  
1000  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TL=65 C  
I(AV)  
2.0  
Amps  
Peak forward surge current  
IFSM  
60  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
VF  
IR  
1.1  
Maximum instantaneous forward voltage at 2.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
100.0  
µ
A
TA=125 C  
Typical junction capacitance (NOTE 1)  
CJ  
RθJA  
pF  
30  
55  
Typical thermal resistance (NOTE 2)  
C/W  
C
Operating junction and storage temperature range  
TJ,TSTG  
-55 to +150  
Note:  
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.P.C.B. mounted with 0.5x0.5(12.7x12.7mm) copper pad areas  

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