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GS1K-LTP PDF预览

GS1K-LTP

更新时间: 2024-01-23 09:39:16
品牌 Logo 应用领域
美微科 - MCC 二极管光电二极管
页数 文件大小 规格书
4页 231K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

GS1K-LTP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED

GS1K-LTP 数据手册

 浏览型号GS1K-LTP的Datasheet PDF文件第2页浏览型号GS1K-LTP的Datasheet PDF文件第3页浏览型号GS1K-LTP的Datasheet PDF文件第4页 
GS1A  
THRU  
GS1M  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
1 Amp  
Silicon Rectifier  
50 to 1000 Volts  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Low Thermal Resistance  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Maximum Ratings  
DO-214AC  
(HSMA) (High Profile)  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 15°C/W Junction To Lead  
H
Cathode Band  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
J
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
GS1A  
GS1B  
GS1D  
GS1G  
GS1J  
GS1K  
GS1M  
GS1A  
GS1B  
GS1D  
GS1G  
GS1J  
GS1K  
GS1M  
35V  
70V  
A
C
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
E
D
B
F
G
1000V  
DIMENSIONS  
INCHES  
MIN  
.078  
.067  
.002  
---  
MM  
MIN  
DIM  
A
MAX  
.116  
.089  
.008  
.02  
MAX  
2.95  
2.25  
.20  
NOTE  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
1.98  
1.70  
.05  
B
Average Forward  
current  
IF(AV)  
1.0A  
C
D
E
Ta = 75°C  
---  
.51  
.035  
.065  
.205  
.160  
.100  
.055  
.096  
.224  
.180  
.112  
.89  
1.40  
2.45  
5.69  
4.57  
2.84  
F
1.65  
5.21  
4.06  
2.57  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine,  
G
H
J
Maximum  
IFM = 1.0A;  
TJ = 25°C*  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
10µA  
50µA  
TJ = 25°C  
TJ = 125°C  
0.085”  
Typical Junction  
CJ  
15pF  
Measured at  
Capacitance  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
0.070”  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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