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GS1AE

更新时间: 2024-11-07 10:35:47
品牌 Logo 应用领域
美微科 - MCC 整流二极管光电二极管
页数 文件大小 规格书
4页 245K
描述
1.0 Amp Silicon Rectifier 50 to 1000 Volts

GS1AE 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DO-214AC包装说明:SMAE, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.27Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:YES
端子面层:TIN LEAD端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

GS1AE 数据手册

 浏览型号GS1AE的Datasheet PDF文件第2页浏览型号GS1AE的Datasheet PDF文件第3页浏览型号GS1AE的Datasheet PDF文件第4页 
GS1AE  
THRU  
GS1ME  
M C C  
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20736 Marilla Street Chatsworth  
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TM  
Micro Commercial Components  
Features  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
1.0 Amp  
Silicon Rectifier  
50 to 1000 Volts  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
Easy Pick And Place  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Low Thermal Resistance  
x
Maximum Ratings  
DO-214AC  
(SMAE)  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 15°C/W Junction To Lead  
H
Cathode Band  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
J
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
GS1AE  
GS1BE  
GS1DE  
GS1GE  
GS1JE  
GS1KE  
GS1ME  
GS1A  
GS1B  
GS1D  
GS1G  
GS1J  
GS1K  
GS1M  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
A
C
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
E
D
B
G
1000V  
DIMENSIONS  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIM  
A
MAX  
.096  
.075  
.008  
.02  
MAX  
2.44  
1.90  
.20  
NOTE  
2.01  
1.27  
.05  
Average Forward  
current  
IF(AV)  
1.0A  
TJ = 75°C  
B
C
D
---  
.51  
E
.030  
.189  
.157  
.090  
.060  
.208  
.180  
.115  
.76  
1.52  
5.30  
4.57  
2.92  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine,  
G
H
4.80  
4.00  
2.29  
J
Maximum  
IFM = 1.0A;  
TJ = 25°C*  
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
10µA  
50µA  
TJ = 25°C  
TJ = 125°C  
0.085”  
Typical Junction  
Capacitance  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
0.070”  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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