Datasheet > GS1332E

GS1332E

更新时间： 2025-01-19 04:19:51

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	247K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

获取价格

数据手册

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GS1332E 数据手册

Pb Free Plating Product

ISSUED DATE :2005/03/10

REVISED DATE :2006/11/24C

GTM

CORPORATION

BVDSS

DS(ON)

20V

600mꢀ

600mA

GS1332E

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The GS1332E provide the designer with best combination of fast switching, low on-resistance and

cost-effectiveness.

Features

*Simple Gate Drive

*Small Package Outline

*2KV ESD Rating (Per MIL-STD-883D)

Package Dimensions

Millimeter

REF.

Min.

0.80

Max.

1.10

0.10

1.00

2.20

1.35

2.40

Min.

Max.

0.42 REF.

0.15

0.25

0.10

0.35

0.40

0.25

0.80

1.80

1.15

1.80

0.65 REF.

0.15 BSC.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

±5

Continuous Drain Current³

Pulsed Drain Current^1,2

Total Power Dissipation

Linear Derating Factor

I_D@T

=25к

=70к

600

470

I_DM

2.5

P_D@T

=25к

0.35

0.003

-55 ~ +150

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-a

Value

360

Unit

к/W

Thermal Resistance Junction-ambient³Max.

GS1332E

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