Datasheet > GS04D065ST

GS04D065ST

更新时间： 2024-09-22 17:01:31

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
6页	921K
描述
SiC SBD

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中文翻译

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数据手册

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GS04D065ST 数据手册

GS04D065ST

GOOD-ARK Electronics

4A,650V Silicon Carbide Schottky Diode

Features

● High-Frequency Operation

● Zero Reverse Recovery Current

● Temperature-Independent Switching

● Extremely Fast Switching

● Plastic package has underwriters Laboratory

Flammability Classification 94V-0

● Halogen-free according to IEC 61249-2-21

TO-220AC

Applications

● Boost Diodes in PFC or DC/DC stages

● LED Lighting Power Supplies

● Power Factor Correction

Anode

Cathode

Mechanical Data

● Case: Epoxy, Molded

● Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

● Lead Temperature for Soldering Purposes: 260°C Max. for 10 sec

● Shipped 50 units per plastic tube

Maximum Ratings & Electrical Characteristics(TA=25℃ unless otherwise noted)

Parameter

Symbol

VRRM

VRWM

VDC

GS04D065ST

Unit

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

650

T^C=25°C

TC=125°C

TC=153°C

Maximum average forward rectified current

I^F(AV)

Peak forward surge current，tp=10ms,Half Sine Pulse

IFSM

T^C=25°C

Power dissipation

P^tot

TC=110°C

Operating junction temperature range

Storage temperature range

-55 to +175

°C

TSTG

-55 to +175

www.goodark.com

Version: Rev.A

12 3 4 5 6

中文翻译

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