Datasheet > GS-065-030-2-L-MR

GS-065-030-2-L-MR

更新时间： 2024-09-14 17:14:59

品牌	Logo	应用领域
英飞凌 - INFINEON		开关光电二极管晶体管
页数	文件大小	规格书
17页	1041K
描述
GS-065-030-2-L-MR 是一款增强型硅基 GaN 功率晶体管。 GaN 的特性允许高电流、高电压击穿和高开关频率。 GS-065-030-2-L-MR 是一款采用 8x8 mm PDF

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GS-065-030-2-L-MR 数据手册

Please note that GaN Systems is an Infineon Technologies Company

The document following this cover page is marked as “GaN Systems”

document as this is the company that originally developed the product.

Please note that Infineon will continue to offer the product to new and

existing customers as part of the Infineon product portfolio.

Continuity of document content

The fact that Infineon offers the following product as part of the Infineon

product portfolio does not lead to any changes to this document. Future

revisions will occur when appropriate, and any changes will be set out on

the document history page.

Continuity of ordering part numbers

Infineon continues to support existing part numbers. Please continue to

use the ordering part numbers listed in the datasheet for ordering.

Infineon Technologies AG

81726 Munich, Germany

www.infineon.com

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型号	品牌	获取价格	描述	数据表
GS-065-030-2-L-TR	INFINEON	获取价格	GS-065-030-2-L-TR 是一款增强型硅基 GaN 功率晶体管。 GaN 的特性
GS-065-030-6-LL-TR	INFINEON	获取价格	The GS-065-030-6-LL is an enhancement-mode GaN-on-Si power transistor with properties that
GS-065-030-6-LR-TR	INFINEON	获取价格	The GS-065-030-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that
GS-065-060-5-B-A-MR	INFINEON	获取价格	The GS-065-060-5-B-A-MR is an enhancement mode GaN-on-Silicon power transistor. The proper
GS-065-060-5-T-A-MR	INFINEON	获取价格	The GS-065-060-5-T-A-MR is an enhancement mode GaN-on-Silicon power transistor. The proper
GS-065-060-5-T-A-TR	INFINEON	获取价格	The GS-065-060-5-T-A-TR is an enhancement mode GaN-on-Silicon power transistor. The proper
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