Datasheet > GRM31CR72A105KA01L

GRM31CR72A105KA01L

更新时间： 2024-11-19 12:54:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		射频
页数	文件大小	规格书
15页	964K
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RF Power Field Effect Transis

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Document Number: MRF6V12500H

Rev. 3, 6/2012

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF6V12500HR3

MRF6V12500HSR3

RF Power transistors designed for applications operating at frequencies

between 960 and 1215 MHz. These devices are suitable for use in pulse

applications.

•

Typical Pulse Performance: V_DD= 50 Volts, I_DQ= 200 mA,

Pulse Width = 128 μsec, Duty Cycle = 10%

(W)

960--1215 MHz, 500 W, 50 V

PULSE

LATERAL N--CHANNEL

RF POWER MOSFETs

out

Application

(MHz)

(dB)

19.7

18.5

(%)

62.0

57.0

Narrowband

Broadband

500 Peak

1030

960--1215

•

Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak

Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

CASE 465--06, STYLE 1

NI--780

MRF6V12500HR3

•

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

For R5 Tape and Reel option, see p. 14.

CASE 465A--06, STYLE 1

NI--780S

MRF6V12500HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Impedance, Junction to Case

Case Temperature 80°C, 500 W Pulse, 128 μsec Pulse Width, 10% Duty Cycle

0.044

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6V12500HR3 MRF6V12500HSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

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