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GPTS7224

更新时间： 2024-09-18 01:26:15
品牌 Logo 应用领域
GPSEMI /
页数 文件大小 规格书
2页 301K
描述
PHASE CONTROLLED SCR

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GPTS7224 数据手册

 浏览型号GPTS7224的Datasheet PDF文件第2页 
Phone: +39-011-988 2251  
Fax: +39-011-988 1358  
Green Power Solutions Srl  
Web: www.gpsemi.it e-mail: info@gpsemi.it  
http://gpsemi.it/pdf/GPTS7224.pdf  
GPTS7224  
PHASE CONTROLLED SCR  
High reliability operation  
DC power supply  
Controlled rectifiers  
DC drives - Motor starters  
BLOCKING VOLTAGE UP TO  
7500 V  
AVERAGE CURRENT  
SURGE CURRENT  
2245 A  
33.5 kA  
BLOCKING CHARACTERISTICS  
Characteristic  
Conditions  
Value  
VRRM  
Repetitive peak reverse voltage  
7500  
7600  
7500  
V
V
V
VRSM  
VDRM  
Non-repetitive peak reverse voltage  
Repetitive peak off-state voltage  
Repetitive peak off-state current, max.  
Repetitive peak reverse current, max.  
IDRM  
IRRM  
VDRM, single phase, half wave, Tj = Tjmax  
VRRM, single phase, half wave, Tj = Tjmax  
300 mA  
300 mA  
ON-STATE CHARACTERISTICS  
IT(AV)  
Average on-state current  
R.M.S. on-state current  
Surge on-state current  
I² t for fusing coordination  
Threshold voltage  
Sine wave,180° conduction, Th = 55 °C  
Sine wave,180° conduction, Th = 55 °C  
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax  
2245  
3526  
A
A
IT(RMS)  
ITSM  
33.5 kA  
I²t  
5611 kA²s  
VT(TO)  
Tj = Tjmax  
Tj = Tjmax  
1.29  
0.398  
2.09  
V
rT  
VTM  
mW  
V
On-state slope resistance  
Peak on-state voltage, max  
Holding current, max  
On-state current IT =  
2000 A , Tj = Tjmax  
IH  
IL  
Tj = 25 °C  
Tj = 25 °C  
300 mA  
Latching current, typ  
3000 mA  
TRIGGERING CHARACTERISTICS  
VGT  
Tj = 25 °C, VD = 12 V  
Tj = 25 °C, VD = 12 V  
Gate trigger voltage  
1.5  
V
IGT  
Gate trigger current  
400 mA  
VGD  
PGM  
PG(AV)  
IFGM  
VD = 67% VRRM, Tj = Tjmax  
Non-trigger voltage  
0.4  
150  
8
V
Peak gate power dissipation  
Average gate power dissipation  
Peak gate current  
Pulse width 0.5 ms  
W
W
A
10  
25  
5
VFGM  
VRGM  
Peak gate voltage (forward)  
Peak gate voltage (reverse)  
V
V
SWITCHING CHARACTERISTICS  
di/dt rep.  
Tj = Tjmax - f = 50 Hz - ITM = 2 · IT(AV)  
Tj = Tjmax - VD = 0.67·VDRM  
Critical rate of rise of on-state current  
Critical rate of rise of off-state voltage  
Reverse recovery charge, typ  
Turn-off time, typ  
150 A/µs  
1500 V/µs  
7000 µC  
700 µs  
dV/dt  
Qrr  
Tj = Tjmax, IT = 2000 A, di/dt = -1 A/µs  
tq  
Tj = Tjmax, IT = 1000 A, di/dt = -1 A/µs  
VR = 100 V, VD = 67% VDRM, dV/dt = 20 V/µs  
THERMAL AND MECHANICAL CHARACTERISTICS  
Rth(j-c)  
Thermal resistance (junction to case)  
Thermal resistance (case to heatsink)  
Max operating junction temperature  
Storage temperature  
Double side cooled  
Double side cooled  
0.0077 °C/W  
0.0014 °C/W  
125 °C  
Rth(c-h)  
Tjmax  
Tstg  
-40 / 125 °C  
76 kN  
F
Clamping force ± 10%  
Mass  
1800 g  
Document GPTS7224T002  
12

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