Datasheet > GPDP3320_17

GPDP3320_17

更新时间： 2022-02-26 14:56:10

品牌	Logo	应用领域
GPSEMI		/
页数	文件大小	规格书
2页	334K
描述
RECTIFIER DIODE

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GPDP3320_17 数据手册

Phone: +39-011-988 2251

Fax: +39-011-988 1358

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Web: www.gpsemi.it e-mail: info@gpsemi.it

http://gpsemi.it/pdf/GPDP3320.pdf

GPDP3320

RECTIFIER DIODE

VOLTAGE UP TO

2200 V

AVERAGE CURRENT

SURGE CURRENT

3200 A

31 kA

BLOCKING CHARACTERISTICS

Characteristic

Conditions

Value

VRRM

Repetitive peak reverse voltage

2200

VRSM

IRRM

Non-repetitive peak reverse voltage

Repetitive peak reverse current, max.

2200

VRRM, single phase, half wave, Tjmax

75 mA

FORWARD CHARACTERISTICS

IF(AV)

Average forward current

Surge forward current

I² t for fusing coordination

Threshold voltage

Sine wave,180° conduction, Th = 55°C

3200

2975

IF(AV)

IFSM

Sine wave,180° conduction, Tc = 85°C

Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax

31 kA

I²t

4805 kA²s

VF(TO)

Tj = Tjmax

0.79

0.09

1.20

Forward slope resistance

Peak forward voltage, max

VFM

Forward current IF =

4000 A, Tj = 25°C

SWITCHING CHARACTERISTICS

Qrr

Tj = Tjmax, IF = 2000 A, di/dt = -5 A/µs

VR = 100 V

Rverse recovery charge, typ

Reverse recovery current

Reverse recovery time

1900 µC

Irr

trr

µs

VFP

Tj = Tjmax, di/dt = A/µs

Forward recovery voltage

THERMAL AND MECHANICAL CHARACTERISTICS

Rth(j-c)

Thermal resistance (junction to case)

Thermal resistance (case to heatsink)

Max operating junction temperature

Storage temperature

Double side cooled

0.02 °C/W

0.005 °C/W

175 °C

Rth(c-h)

Tjmax

Tstg

Double side cooled

-40 / 175 °C

22 kN

Clamping force ± 10%

Mass

500 g

Document GPDP3320T002

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