Datasheet > GPDP3320

GPDP3320

更新时间： 2022-12-22 12:16:33

品牌	Logo	应用领域
GPSEMI		二极管
页数	文件大小	规格书
2页	92K
描述
RECTIFIER DIODE

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数据手册

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GPDP3320 数据手册

Phone: +39-010-659 1869

Fax: +39-010-659 1870

Web: www.gpsemi.it

Green Power Solutions srl

Via Greto di Cornigliano 6R - 16152 Genova , Italy

E-mail: info@gpsemi.it

GPDP3320

RECTIFIER DIODE

VOLTAGE UP TO

2200 V

AVERAGE CURRENT

SURGE CURRENT

3200 A

31 kA

BLOCKING CHARACTERISTICS

Characteristic

Conditions

Value

V^RRM

V^RSM

I^RRM

Repetitive peak reverse voltage

2200

Non-repetitive peak reverse voltage

Repetitive peak reverse current, max.

V^RRM, single phase, half wave, Tjmax

75 mA

FORWARD CHARACTERISTICS

I^F(AV)

Average forward current

Surge forward current

I² t for fusing coordination

Threshold voltage

Sine wave,180° conduction, Th = 55°C

Sine wave,180° conduction, Tc = 85°C

Non rep. half sine wave, 50 Hz, V^R= 0 V, T^j= T^jmax

3200

2975

31 kA

I^F(AV)

I^FSM

I²t

4805 kA²s

V^F(TO)

T^j= T^jmax

0,79

0,09

1,20

mΩ

r^F

Forward slope resistance

Peak forward voltage, max

V^FM

Forward current I^F=

4000 A, Tj = 25°C

SWITCHING CHARACTERISTICS

Q^rr

I^rr

t^rr

T^j= T^jmax, I^F= 2000 A, di/dt = -5 A/µs

V^R= 100 V

Rverse recovery charge, typ

Reverse recovery current

Reverse recovery time

1900 µC

µs

V^FP

T^j= T^jmax, di/dt = A/µs

Forward recovery voltage

THERMAL AND MECHANICAL CHARACTERISTICS

R^th(j-c)

Thermal resistance (junction to case)

Thermal resistance (case to heatsink)

Max operating junction temperature

Storage temperature

Double side cooled

0,02 °C/W

0,005 °C/W

175 °C

R^th(c-h)

T^jmax

T^stg

-40 / 175 °C

22 kN

Clamping force ± 10%

Mass

500 g

Document GPDP3320T001

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