Datasheet > GPDG3126

GPDG3126

更新时间： 2022-02-26 14:23:35

品牌	Logo	应用领域
GPSEMI		/
页数	文件大小	规格书
2页	270K
描述
RECTIFIER DIODE

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GPDG3126 数据手册

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http://gpsemi.it/pdf/GPDG3126.pdf

GPDG3126

RECTIFIER DIODE

Low profile ceramic package

VOLTAGE UP TO

2900 V

1265 A

11 kA

AVERAGE CURRENT

SURGE CURRENT

BLOCKING CHARACTERISTICS

Characteristic

Conditions

Value

VRRM

Repetitive peak reverse voltage

2900

3000

VRSM

IRRM

Non-repetitive peak reverse voltage

Repetitive peak reverse current, max.

VRRM, single phase, half wave, Tj = Tjmax

50 mA

FORWARD CHARACTERISTICS

IF(AV)

Average forward current

R.M.S. forward current

Surge forward current

I² t for fusing coordination

Threshold voltage

Sine wave,180° conduction, Th = 55°C

1265

1987

IF(RMS)

IFSM

I²t

Sine wave,180° conduction, Th = 55°C

Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax

11 kA

605 kA²s

VF(TO)

Tj = Tjmax

0.87

0.33

1.27

Forward slope resistance

Peak forward voltage, max

VFM

Forward current IF =

1200 A, Tj = Tjmax

SWITCHING CHARACTERISTICS

Qrr

Tj = Tjmax, IF = 2000 A, di/dt = -5 A/µs

VR = 100 V

Rverse recovery charge, typ

Reverse recovery current

Reverse recovery time

µC

Irr

trr

µs

VFP

Tj = Tjmax, di/dt = A/µs

Forward recovery voltage

THERMAL AND MECHANICAL CHARACTERISTICS

Rth(j-c)

Thermal resistance (junction to case)

Thermal resistance (case to heatsink)

Max operating junction temperature

Storage temperature

Double side cooled

0.035 °C/W

0.015 °C/W

175 °C

Rth(c-h)

Tjmax

Tstg

Double side cooled

-30 / 175 °C

Clamping force ± 5%

Mass

280

Document GPDG3126T002

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