Datasheet > GPDG3115

GPDG3115

更新时间： 2022-12-22 12:15:58

品牌	Logo	应用领域
GPSEMI		二极管
页数	文件大小	规格书
1页	101K
描述
RECTIFIER DIODE

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GPDG3115 数据手册

Phone: +39-010-659 1869

Fax: +39-010-659 1870

Web: www.gpsemi.it

Green Power Solutions srl

Via Greto di Cornigliano 6R - 16152 Genova , Italy

E-mail: info@gpsemi.it

GPDG3115

RECTIFIER DIODE

Low profile ceramic package

VOLTAGE UP TO

2200 V

AVERAGE CURRENT

SURGE CURRENT

1150 A

14 kA

BLOCKING CHARACTERISTICS

Characteristic

Conditions

Value

RRM

Repetitive peak reverse voltage

2200

RSM

Non-repetitive peak reverse voltage

Repetitive peak reverse current, max.

2300

RRM

VRRM, single phase, half wave, Tj = Tjmax

30 mA

FORWARD CHARACTERISTICS

F(AV)

Average forward current

R.M.S. forward current

Surge forward current

I² t for fusing coordination

Threshold voltage

Sine wave,180°conduction, T h = 55°C

Sine wave,180°conduction, Th = 55°C

1150

1806

F(RMS)

FSM

Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax

14 kA

I²t

980 kA²s

F(TO)

= Tjmax

0.925

Ω

Forward slope resistance

Peak forward voltage, max

0.258

1.235

Forward current IF =

1200 A, Tj = Tjmax

SWITCHING CHARACTERISTICS

Tj = Tjmax, IF = 2000 A, di/dt = -5 A/µs

Rverse recovery charge, typ

Reverse recovery current

Reverse recovery time

µC

VR = 100 V

µs

Tj = Tjmax, di/dt = A/µs

Forward recovery voltage

THERMAL AND MECHANICAL CHARACTERISTICS

th(j-c)

Thermal resistance (junction to case)

Thermal resistance (case to heatsink)

Max operating junction temperature

Storage temperature

Double side cooled

0.038 °C/W

0.012 °C/W

150 °C

Rth(c-h)

Double side cooled

jmax

stg

-40 / 150 °C

Clamping force ± 10%

Mass

110

Document GPDG3115T001

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