Datasheet > GPDD013K_17

GPDD013K_17

更新时间： 2022-02-26 13:09:12

品牌	Logo	应用领域
GPSEMI		/
页数	文件大小	规格书
2页	283K
描述
Low profile ceramic package, Spot welding applications

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GPDD013K_17 数据手册

Phone: +39-011-988 2251

Fax: +39-011-988 1358

Green Power Solutions Srl

Web: www.gpsemi.it e-mail: info@gpsemi.it

http://gpsemi.it/pdf/GPDD013K.pdf

GPDD013K

RECTIFIER DIODE

Low profile ceramic package

Spot welding applications

Electroplating applications

VOLTAGE UP TO

400 V

AVERAGE CURRENT

SURGE CURRENT

13600 A

85 kA

BLOCKING CHARACTERISTICS

Characteristic

Conditions

Value

400 V

500 V

50 mA

VRRM

Repetitive peak reverse voltage

VRSM

IRRM

Non-repetitive peak reverse voltage

Repetitive peak reverse current, max.

VRRM, single phase, half wave, Tj = Tjmax

FORWARD CHARACTERISTICS

IF(AV)

Average forward current

R.M.S. forward current

Surge forward current

I² t for fusing coordination

Threshold voltage

Sine wave,180° conduction, Tc = 70°C

13600 A

21363 A

85 kA

IF(RMS)

IFSM

Sine wave,180° conduction, Tc = 70°C

Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax

I²t

36125 kA²s

0.74 V

VF(TO)

Tj = Tjmax

Forward slope resistance

Peak forward voltage, max

0.018

VFM

Forward current IF =

8000 A, Tj = Tjmax

0.9 V

SWITCHING CHARACTERISTICS

Qrr

Tj = Tjmax, IF = 1000 A, di/dt = -30 A/µs

VR = 50 V

Rverse recovery charge, typ

Reverse recovery current

Reverse recovery time

µC

Irr

trr

µs

VFP

Tj = Tjmax, di/dt = 100 A/µs

Forward recovery voltage

THERMAL AND MECHANICAL CHARACTERISTICS

Rth(j-c)

Thermal resistance (junction to case)

Thermal resistance (case to heatsink)

Max operating junction temperature

Storage temperature

Double side cooled

0.006 °C/W

0.003 °C/W

180 °C

Rth(c-h)

Tjmax

Tstg

Double side cooled

-40 / 180 °C

35 kN

Clamping force ± 10%

Mass

220 g

Document GPDD013KT002

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