Datasheet > GP20M

GP20M

更新时间： 2023-12-06 20:03:57

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	150K
描述
Rectifier device Common rectifier diodes

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GP20M 数据手册

GP20A - GP20M

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 2.0 A

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: D O - 1 5

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.40 grams (approx.)

Mounting Position: Any

DO-15

Min

Dim

Max

—

25.40

5.50

7.62

0.889

3.60

0.686

2.60

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol GP20A GP20B GP20D GP20G GP20J GP20K GP20M

Unit

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

200

140

400

600

420

800

560

1000

700

R(RMS)

RMS Reverse Voltage

280

2.0

Average Rectified Output Current

(Note 1)

@T_A= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 2.0A

1.0

µA

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

5.0

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance Junction to Ambient

(Note 1)

ꢀ

K/W

Operating Temperature Range

Storage Temperature Range

-65 to +125

-65 to +150

°C

STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1 of 2

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