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GP20K PDF预览

GP20K

更新时间: 2023-12-06 20:03:57
品牌 Logo 应用领域
森美特 - SUNMATE 二极管
页数 文件大小 规格书
2页 150K
描述
Rectifier device Common rectifier diodes

GP20K 数据手册

 浏览型号GP20K的Datasheet PDF文件第2页 
GP20A - GP20M  
AXIAL LEADED SILICON RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 2.0 A  
Features  
!
!
!
!
!
Diffused Junction  
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
C
Mechanical Data  
D
!
!
Case: D O - 1 5  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.40 grams (approx.)  
Mounting Position: Any  
DO-15  
Min  
Dim  
A
Max  
!
!
!
!
25.40  
5.50  
B
7.62  
0.889  
3.60  
C
0.686  
2.60  
Marking: Type Number  
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics  
TA = 25C unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Characteristic  
Symbol GP20A GP20B GP20D GP20G GP20J GP20K GP20M  
Unit  
RRM  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RWM  
V
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
R
V
R(RMS)  
RMS Reverse Voltage  
V
280  
2.0  
V
A
Average Rectified Output Current  
(Note 1)  
O
I
@TA = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
FSM  
I
70  
A
FM  
Forward Voltage  
@IF = 2.0A  
V
1.0  
V
µA  
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 100°C  
@TA = 25°C  
5.0  
50  
RM  
I
j
Typical Junction Capacitance (Note 2)  
C
20  
40  
pF  
Typical Thermal Resistance Junction to Ambient  
(Note 1)  
JA  
R
K/W  
j
Operating Temperature Range  
Storage Temperature Range  
T
-65 to +125  
-65 to +150  
°C  
°C  
STG  
T
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
1 of 2  
www.sunmate.tw  

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