GP20A - GP20M
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 2.0 A
Features
!
!
!
!
!
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
C
Mechanical Data
D
!
!
Case: D O - 1 5
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.40 grams (approx.)
Mounting Position: Any
DO-15
Min
Dim
A
Max
—
!
!
!
!
25.40
5.50
B
7.62
0.889
3.60
C
0.686
2.60
Marking: Type Number
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol GP20A GP20B GP20D GP20G GP20J GP20K GP20M
Unit
RRM
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RWM
V
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
R
V
R(RMS)
RMS Reverse Voltage
V
280
2.0
V
A
Average Rectified Output Current
(Note 1)
O
I
@TA = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
I
70
A
FM
Forward Voltage
@IF = 2.0A
V
1.0
V
µA
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
5.0
50
RM
I
j
Typical Junction Capacitance (Note 2)
C
20
40
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
JA
ꢀ
R
K/W
j
Operating Temperature Range
Storage Temperature Range
T
-65 to +125
-65 to +150
°C
°C
STG
T
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1 of 2
www.sunmate.tw