TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
GP10N - GP10Y
PRV : 1100 - 1600 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
1.00 (25.4)
* Glass passivated junction chip
* High current capability
* High reliability
0.108 (2.74)
MIN.
0.078 (1.99)
* Low reverse current
* Pb Free / RoHS Compliant
0.205 (5.20)
0.161 (4.10)
MECHANICAL DATA :
1.00 (25.4)
0.034 (0.86)
MIN.
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
0.028 (0.71)
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.d
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
SYMBOL GP10N GP10Q GP10T GP10V GP10W GP10Y UNIT
VRRM
VRMS
VDC
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
1100
770
1200
840
1300
910
1400
980
1500
1050
1500
1600
1120
1600
V
V
V
Maximum DC Blocking Voltage
1100
1200
1300
1400
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 55 °C
Peak Forward Surge Current
IF(AV)
1.0
25
A
IFSM
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
1.2
7.0
1.3
5.0
VF
IR
Maximum Forward Voltage at IF = 1.0 Amp.
V
μA
5.0
50
Maximum DC Reverse Current Ta = 25 °C
IR(H)
Trr
CJ
at rated DC Blocking Voltage
Ta = 125 °C
μA
3.0
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Junction Temperature Range
Storage Temperature Range
µs
pF
RθJA
TJ
55
°C/W
°C
- 65 to + 150
- 65 to + 150
TSTG
°C
Notes : (1) Reverse Recovery Test Conditions: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
(3) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 00 : November 19, 2008