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GN2470K4-G PDF预览

GN2470K4-G

更新时间: 2024-11-19 14:50:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管功率控制
页数 文件大小 规格书
5页 533K
描述
IGBT, TO-252AA

GN2470K4-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.79
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:700 V配置:SINGLE WITH BUILT-IN FET
最大降落时间(tf):12000 ns门极发射器阈值电压最大值:3.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2湿度敏感等级:3
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL功耗环境最大值:2.5 W
认证状态:Not Qualified最大上升时间(tr):600 ns
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
最大关闭时间(toff):12050 ns标称断开时间 (toff):7020 ns
最大开启时间(吨):615 ns标称接通时间 (ton):408 ns
Base Number Matches:1

GN2470K4-G 数据手册

 浏览型号GN2470K4-G的Datasheet PDF文件第2页浏览型号GN2470K4-G的Datasheet PDF文件第3页浏览型号GN2470K4-G的Datasheet PDF文件第4页浏览型号GN2470K4-G的Datasheet PDF文件第5页 
GN2470  
IGBT  
Insulated Gate  
Bipolar Transistor  
Features  
General Description  
The Supertex GN2470 is a 700V, 3.5amp insulated gate  
bipolar transistor (IGBT) that combines the positive aspects  
of both BJTs and MOSFETs.  
Low voltage drop at high currents  
Industry standard TO-252 (D-Pak) package  
700V breakdown voltage rating  
The GN2470 IGBT has lower on-state voltage drop with high  
blocking voltage capabilities and features many desirable  
properties including a MOS input gate, low conduction voltage  
drop at high currents.  
Applications  
White goods  
Small appliances  
Lighting controls  
Motor drives  
Meter readers  
Small off-line power supplies  
Pin Configuration  
Ordering Information  
Package Option  
COLLECTOR  
Device  
TO-252 (D-PAK)  
GN2470  
GN2470K4-G  
-G indicates that the package is RoHS certified (“Green”)  
EMITTER  
GATE  
TO-252 (D-PAK) (K4)  
Pin Configuration  
Absolute Maximum Ratings  
Parameter  
YY = Year Sealed  
YYWW  
WW = Week Sealed  
Value  
700V  
±20V  
GN2470  
LLLLLLL  
L = Lot Number  
Collector-to-emitter voltage  
Gate-to-emitter voltage  
= “Green” Packaging  
TO-252 (D-PAK) (K4)  
Operating junction and storage  
temperature range  
-55OC to +150OC  
Soldering temperature*  
300OC  
Absolute Maximum Ratings are those values beyond which damage to the device may  
occur. Functional operation under these conditions is not implied. Continuous operation  
of the device at the absolute rating level may affect device reliability. All voltages are  
referenced to device ground.  
*
Distance of 1.6mm from case for 10 seconds.  
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com  

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