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GN01100B PDF预览

GN01100B

更新时间: 2024-11-25 22:32:51
品牌 Logo 应用领域
松下 - PANASONIC 射频和微波射频放大器微波放大器
页数 文件大小 规格书
2页 33K
描述
GaAs IC (with built-in ferroelectric)

GN01100B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSSOP6,.08Reach Compliance Code:unknown
风险等级:5.92构造:COMPONENT
增益:20 dB最大输入功率 (CW):-5 dBm
JESD-609代码:e0安装特点:SURFACE MOUNT
功能数量:1端子数量:6
最高工作温度:90 °C最低工作温度:-30 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TSSOP6,.08
电源:3 V射频/微波设备类型:NARROW BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:45 mA
表面贴装:YES技术:GAAS
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

GN01100B 数据手册

 浏览型号GN01100B的Datasheet PDF文件第2页 
GaAs MMIC  
GN01100B  
GaAs IC (with built-in ferroelectric)  
Unit: mm  
+0.05  
0.2±0.05  
0.12  
0.02  
For the preamplifier of the transmitting section in a cellular phone  
Other communication equipment  
5
6
4
Features  
R0.2  
1
Super miniature S-Mini 6-pin package (2125 size)  
Transmitter amplifier : Wide dynamic range on low operation current  
: Gain control function built-in  
2
3
0.65  
0.65  
6 - 0° to 10°  
2.0±0.1  
Absolute Maximum Ratings Ta=25 °C  
Parameter  
Power supply voltage  
Circuit current  
Symbol  
VDD  
IDD  
Ratings  
Unit  
V
5
80  
mA  
V
1 : RFIN  
2 : VDD1  
3 : VAGC  
4 : VDD2  
5 : GND  
6 : VREF  
Gate control voltage  
Max input power  
VAGC  
PIN  
0 to 3  
5  
dBm  
mW  
°C  
EIAJ : SC-88  
S Mini Type Package (6-pin)  
Allowable power dissipation  
Operating ambient temperature  
Storage temperature  
PD  
150  
Marking Symbol : HU  
Topr  
Tstg  
30 to +90  
40 to +120  
°C  
Electrical Characteristics VDD1=VDD2=3.0 V, f=906 MHz, Ta=25 °C±3 °C  
Parameter  
Symbol  
IDD  
Conditions  
VAGC=2.0 V, PIN=−20 dBm  
VAGC=2.0 V, PIN=−20 dBm  
VAGC=0.5 V, PIN=−20 dBm  
PG1PG2  
min  
typ  
37  
max  
Unit  
mA  
dB  
1
*
Circuit current  
45  
1
*
Power gain 1  
Power gain 2  
PG1  
PG2  
DR  
20  
23  
1
*
10  
34  
5  
dB  
Dynamic range  
Gain control sensitivity  
30  
25  
dB  
1, 2  
*
GS  
Pin=−20 dBm  
49  
90  
dB/V  
dBc  
Adjacent channel leakage  
ACP1  
VAGC=2.0 V, POUT=5 dBm  
IS-95 modulation, 900 kHz Detuning  
30 kHz Bandwidth  
54  
50  
*1, 3  
power (ACP) 1  
Adjacent channel leakage  
ACP2  
VAGC=2.0 V, Pout=5 dBm  
IS-95 modulation, 1.98 MHz Detuning  
30 kHz Bandwidth  
74  
65  
dBc  
*1, 3  
power (ACP) 1  
1
Note) * : Refer to measurement circuit.  
2
3
*
*
: {PG(VAGC=1.6V)[dB]PG(VAGC=1.2V)[dB]/0.4[V]  
: Design-guaranteed items.  
1

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