GMS05F
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TVS Diode Array
SOT-23-5L
Pin Configuration
SOT-23-5L (Top View)
0.120 (3.05)
0.110 (2.80)
5
4
Top View
0.118 (3.00)
0.102 (2.60)
0.070 (1.75)
0.059 (1.50)
V
IN
SHDN
NFB
SW
GND
1
2
3
0.020 (0.50)
0.014 (0.35)
Mounting Pad Layout
0.040 (1.05)
0.033 (0.85)
0.094 (2.4)
Dimensions in inches
and (millimeters)
0.083 (2.1)
0.067 (1.7)
0.074 (1.9)
Ref.
0.006 (0.150)
0.0004 (0.010)
0.008 (0.20)
0.0035 (0.090)
0.051 (1.30)
0.036 (0.90)
0.037 (0.95)
Ref.
0.028 (0.7)
10° Typical
0.039
(1.07)
Features
• Transient protection for data lines as per
IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 1000-4-4 (EFT) 40A (tp = 5/50ns)
Mechanical Characteristics
Case: SOT-23-5L package
Molding Compound Flammability Rating: UL 94V-0
Marking Code: F05
Packaging Codes – Options:
IEC 1000-4-5 (Lightning) 24A (tp = 8/20µs)
• Small package for use in portable electronics
• Protects 4 I/O lines • Low leakage current
• Low operating and clamping voltages
E8 – 10K per 13” reel, 30K/box
E9 – 3K per 7” reel, 30K/box
• High temperature guaranteed: 250°C/10 sec. at terminals
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
W
Peak Pulse Power 8/20µs waveform
Peak Pulse Current 8/20µs waveform
Operating Temperature
Ppk
350
24
IPP
A
TJ
–55 to +125
–55 to +150
°C
°C
Storage Temperature
TSTG
Electrical Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Minimum
Typical
Maximum
Unit
V
Reverse Stand-Off Voltage
VRWM
–
6
–
–
–
–
5
–
V
Reverse Breakdown Voltage at It = 1mA
Reverse Leakage Current at VRWM = 5V
VBR
IR
20
µA
Clamping Voltage at IPP = 5A, 8/20µs waveform
at IPP = 24A, 8/20µs waveform
9.8
14.5
VC
VF
Cj
–
–
–
–
V
V
Peak Forward Voltage at IF = 1A, 8/20µs waveform
1.5
325
–
Junction Capacitance between I/O pins and Gnd
VR = 0V, f = 1MHZ
400
pF
Document Number 88344
28-Feb-02
www.vishay.com
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