Datasheet > GM8205A

GM8205A

更新时间： 2024-09-14 05:34:39

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其他 - ETC		/
页数	文件大小	规格书
4页	172K
描述
20V6A双场管

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中文翻译

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数据手册

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GM8205A 数据手册

Gem micro

GM8205A

semiconductor Inc.

Pb free

Dual N-Channel High Density Trench MOSFET (20V, 6.0A)

PRODUCT SUMMARY

VDSS

RDS(on) (m-ohm) Max

28 @ VGS =4.0V, ID=6.0A

40 @ VGS =2.5V, ID=5.2A

20V

6.0A

Features

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Lead free product is acquired

• Surface mount Package

Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)

Symbol

V_DS

V_GS

I_D

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

±12

Drain Current (Continuous)

Drain Current (Pulsed) ^a

6.0

I_DM

P_D

Total Power Dissipation @T_A=25^oC

2.0

I_S

Maximum Diode Forward Current

1.7

T_j, T_stg

Operating Junction and Storage Temperature Range

Thermal Resistance Junction to Ambient (PCB mounted)^b

-55 to +150

°C

°C/W

R_θ

a: Repetitive Rating: Pulse width limited by the maximum junction temperation.

b: 1-in²2oz Cu PCB board

DS-GM8205A-REV00

Aa1

12 3 4

中文翻译

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