Datasheet > GM71VS16400CLJ-7

GM71VS16400CLJ-7

更新时间： 2024-11-06 23:53:51

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
10页	103K
描述
x4 Fast Page Mode DRAM

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中文翻译

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数据手册

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GM71VS16400CLJ-7 数据手册

GM71V16400C

GM71VS16400CL

4,194,304 WORDS x 4 BIT

CMOS DYNAMIC RAM

Features

Description

The GM71V(S)16400C/CL is the new

generation dynamic RAM organized 4,194,304

words x 4 bit. GM71V(S)16400C/CL has

realized higher density, higher performance and

various functions by utilizing advanced CMOS

process technology. The GM71V(S)16400C/CL

offers Fast Page Mode as a high speed access

mode. Multiplexed address inputs permit the

GM71V(S)16400C/CL to be packaged in a

standard 300 mil 24(26) pin SOJ, and a standard

300 mil 24(26) pin plastic TSOP II. The

package size provides high system bit densities

and is compatible with widely available

automated testing and insertion equipment.

System oriented features include single power

supply 3.3V+/-0.3V tolerance, direct interfacing

capability with high performance logic families

such as Schottky TTL.

* 4,194,304 Words x 4 Bit Organization

* Fast Page Mode Capability

* Single Power Supply (3.3V+/-0.3V)

* Fast Access Time & Cycle Time

(Unit: ns)

tRAC

tCAC

tPC

110

130

GM71V(S)16400C/CL-5

GM71V(S)16400C/CL-6

GM71V(S)16400C/CL-7

* Low Power

Active : 324/288/252mW (MAX)

Standby : 7.2mW (CMOS level : MAX)

: 0.36mW (L-version : MAX)

* RAS Only Refresh, CAS before RAS Refresh,

Hidden Refresh Capability

* All inputs and outputs TTL Compatible

* 4096 Refresh Cycles/64ms

* 4096 Refresh Cycles/128ms (L-version)

* Self Refresh Operation (L-version)

* Battery backup operation (L-version)

* Test function : 16bit parallel test mode

Pin Configuration

24(26) SOJ

24(26) TSOP II

VCC

I/O1

I/O2

VSS

VCC

I/O1

I/O2

VSS

I/O4

I/O3

CAS

I/O4

I/O3

CAS

RAS

A11

RAS

A11

A10

VSS

VCC

VSS

VCC

(Top View)

Rev 0.1 / Apr’01

12 3 4 5 6 7...10

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