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GM71CS16160CLJ-5 PDF预览

GM71CS16160CLJ-5

更新时间: 2024-01-07 08:16:03
品牌 Logo 应用领域
其他 - ETC 动态存储器
页数 文件大小 规格书
10页 115K
描述
x16 Fast Page Mode DRAM

GM71CS16160CLJ-5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.8
访问模式:FAST PAGE最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATIONI/O 类型:COMMON
JESD-30 代码:R-PDSO-J42JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:42
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ42,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified刷新周期:4096
自我刷新:YES最大待机电流:0.00015 A
子类别:DRAMs最大压摆率:0.115 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GM71CS16160CLJ-5 数据手册

 浏览型号GM71CS16160CLJ-5的Datasheet PDF文件第2页浏览型号GM71CS16160CLJ-5的Datasheet PDF文件第3页浏览型号GM71CS16160CLJ-5的Datasheet PDF文件第4页浏览型号GM71CS16160CLJ-5的Datasheet PDF文件第5页浏览型号GM71CS16160CLJ-5的Datasheet PDF文件第6页浏览型号GM71CS16160CLJ-5的Datasheet PDF文件第7页 
GM71C16160C  
GM71CS16160CL  
1,048,576 WORDS x 16 BIT  
CMOS DYNAMIC RAM  
Description  
F eatur es  
T h e G M 7 1 C ( S ) 1 6 1 6 0 C /CL is the new  
generation dynamic RAM organized 1,048,576  
x 16 bit. GM71C(S)16160C/CL has realized  
higher density, higher performance and various  
functions by utilizing advanced CMOS process  
technology. The GM71C(S)16160C/CL offers  
Fast Page Mode as a high speed access mode.  
M u l t i p l e x e d a d d r e s s i n p u t s p e r m i t t h e  
G M 7 1 C ( S ) 1 6 1 6 0 C /CL to be packaged in  
standard 400 mil 42 pin plastic SOJ , and  
standard 400mil 44(50)pin plastic TSOP II. The  
package size provides high system bit densities  
and is compatible with widely available  
automated testing and insertion equipment.  
* 1 ,048,576 Words x 16 Bit Organization  
* Fast Page Mode Capability  
* S ingle Power Supply (5V+/-10%)  
* Fast Access Time & Cycle Time  
(Unit: ns)  
tRAC  
tCAC  
t
R C  
t
PC  
GM71C(S)16160C/CL-5  
GM71C(S)16160C/CL-6  
GM71C(S)16160C/CL-7  
50  
60  
70  
13  
15  
18  
90  
35  
40  
45  
110  
130  
* Low Power  
Active : 605/550/495mW (MAX)  
Standby : 11mW (CMOS level : MAX )  
0.83mW (L-version : MAX )  
* RAS Only Refresh, CAS before RAS Refresh,  
Hidden Refresh Capability  
* All inputs and outputs TTL Compatible  
* 4096 Refresh Cycles/64ms  
* 4096 Refresh Cycles/128ms (L-version)  
* Self Refresh Operation (L-version)  
* B attery B ack Up Operation (L-version)  
* 2 CAS byte Control  
Pin Configuration  
42 SOJ  
44(50) TSOP II  
1
V S S  
5 0  
V CC  
1
4 2  
4 1  
V S S  
V CC  
I/O0  
I/O1  
I/O2  
I/O3  
V CC  
I/O4  
I/O5  
I/O6  
I/O7  
NC  
4 9  
2
3
4
I/O0  
I/O1  
I/O2  
I/O3  
V CC  
I/O15  
I/O14  
I/O13  
2
3
I/O15  
4 8  
4 7  
4 0 I/O14  
3 9 I/O13  
4
5
5
6
7
4 6 I/O12  
4 5 V S S  
3 8  
I/O12  
6
3 7  
V S S  
4 4  
I/O4  
I/O5  
I/O11  
7
3 6  
I/O11  
8
9
4 3 I/O10  
4 2 I/O9  
4 1 I/O8  
8
3 5  
I/O10  
I/O6  
I/O7  
NC  
1 0  
1 1  
9
3 4  
3 3  
3 2  
3 1  
3 0  
I/O9  
I/O8  
NC  
4 0  
NC  
1 0  
1 1  
1 2  
1 3  
LCAS  
UCAS  
OE  
NC  
W E  
NC  
NC  
3 6 NC  
1 5  
1 6  
3 5  
LCAS  
3 4  
1 4  
1 5  
2 9  
2 8  
1 7  
1 8  
R A S  
A11  
A10  
A0  
W E  
UCAS  
3 3  
R A S  
A9  
OE  
3 2  
A9  
1 9  
2 0  
A11  
A10  
A0  
1 6  
1 7  
1 8  
1 9  
2 7  
A8  
3 1  
A8  
2 6 A7  
3 0  
A7  
2 1  
2 2  
2 3  
2 5  
A6  
A1  
A2  
2 9  
A6  
A1  
2 4  
A5  
2 8 A5  
2 7 A4  
A2  
2 0  
2 1  
2 3 A4  
A3  
2 4  
2 5  
A3  
2 6  
2 2  
V S S  
V CC  
V CC  
V S S  
(Top View)  
Rev 0.1 / Apr’01  

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