Datasheet > GM71C17803CT-6

GM71C17803CT-6

更新时间： 2024-11-02 23:53:43

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管动态存储器
页数	文件大小	规格书
9页	105K
描述
x8 EDO Page Mode DRAM

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GM71C17803CT-6 数据手册

GM71C17803C

GM71CS17803CL

2,097,152 WORDS x 8 BIT

CMOS DYNAMIC RAM

Description

Features

The GM71C(S)17803C/CL is the new

generation dynamic RAM organized 2,097,152

x 8 bit. GM71C(S)17803C/CL has realized

higher density, higher performance and various

functions by utilizing advanced CMOS process

technology. The GM71C(S)17803C/CL offers

Extended Data out(EDO) Page Mode as a high

speed access mode. Multiplexed address inputs

permit the GM71C(S)17803C/CL to be

packaged in standard 400 mil 28 pin plastic

SOJ, and standard 400mil 28pin plastic TSOP

II. The package size provides high system bit

densities and is compatible with widely

available automated testing and insertion

equipment.

* 2,097,152 Words x 8 Bit Organization

* Extended Data Out Mode Capability

* Single Power Supply (5V+/-10%)

* Fast Access Time & Cycle Time

(Unit: ns)

tRAC

tCAC

tHPC

15 104

18 124

GM71C(S)17803C/CL-5

GM71C(S)17803C/CL-6

GM71C(S)17803C/CL-7

* Low Power

Active : 715/660/605/550mW (MAX)

Standby : 11mW (CMOS level : MAX)

0.83mW (L-version : MAX)

* RAS Only Refresh, CAS before RAS Refresh,

Hidden Refresh Capability

* All inputs and outputs TTL Compatible

* 2048 Refresh Cycles/32ms

* 2048 Refresh Cycles/128ms (L- version)

* Battery Back Up Operation (L- version)

* Self Refresh Operation (L-version)

Pin Configuration

28 SOJ

28 TSOP II

VCC

VSS

VCC

VSS

I/O0

I/O1

I/O7

I/O0

I/O1

I/O7

I/O6

I/O7

26 I/O6

I/O2

I/O3

I/O5

I/O4

CAS

I/O2

I/O3

I/O5

I/O4

CAS

I/O5

I/O4

CAS

RAS

21 A9

A10

VSS

VCC

VSS

VCC

VSS

(Top View)

Rev 0.1 / Apr’01

12 3 4 5 6 7...9

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