Datasheet > GM71C17800CT-7

GM71C17800CT-7

更新时间： 2024-11-02 23:53:43

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
9页	94K
描述
x8 Fast Page Mode DRAM

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GM71C17800CT-7 数据手册

GM71C17800C

GM71CS17800CL

2,097,152 WORDS x 8 BIT

CMOS DYNAMIC RAM

Description

Features

The GM71C(S)17800C/CL is the new

generation dynamic RAM organized 2,097,152

x 8 bit. GM71C(S)17800C/CL has realized

higher density, higher performance and various

functions by utilizing advanced CMOS process

technology. The GM71C(S)17800C/CL offers

Fast Page Mode as a high speed access mode.

Multiplexed address inputs permit the

GM71C(S)17800C/CL to be packaged in

standard 400 mil 28pin plastic SOJ, and standard

400mil 28 pin plastic TSOP II. The package size

provides high system bit densities and is

compatible with widely available automated

testing and insertion equipment.

* 2,097,152 Words x 8 Bit Organization

* Fast Page Mode Capability

* Single Power Supply (5V+/-10%)

* Fast Access Time & Cycle Time

(Unit: ns)

tRAC

tCAC

tPC

GM71C(S)17800C/CL-5

15 110

18 130

GM71C(S)17800C/CL-6

GM71C(S)17800C/CL-7

* Low Power

Active : 715/660/605mW (MAX)

Standby : 11mW (CMOS level : MAX)

0.83mW (L-version : MAX)

* RAS Only Refresh, CAS before RAS Refresh,

Hidden Refresh Capability

* All inputs and outputs TTL Compatible

* 2048 Refresh Cycles/32ms

* 2048 Refresh Cycles/128ms (L- version)

* Battery Back Up Operation (L- version)

* Self Refresh Operation (L-version)

Pin Configuration

28 SOJ

28 TSOP II

VSS

I/O0

I/O1

I/O7

I/O0

I/O1

I/O7

26 I/O6

I/O2

I/O3

I/O5

I/O4

CAS

I/O2

I/O3

I/O5

I/O4

CAS

RAS

VSS

RAS

21 A9

A10

VSS

VCC

(Top View)

Rev 0.1 / Apr’01

12 3 4 5 6 7...9

中文翻译

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