Datasheet > GM71C16403CLJ-5

GM71C16403CLJ-5

更新时间： 2024-11-02 23:53:43

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管动态存储器
页数	文件大小	规格书
10页	94K
描述
x4 EDO Page Mode DRAM

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数据手册

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GM71C16403CLJ-5 数据手册

GM71C(S)16403C/CL

4,194,304 WORDS x 4 BIT

CMOS DYNAMIC RAM

Description

Features

* 4,194,304 Words x 4 Bit Organization

* Extended Data Out Mode Capability

* Single Power Supply (5V+/-10%)

* Fast Access Time & Cycle Time

The GM71C(S)16403C/CL is the new

generation dynamic RAM organized 4,194,304

words x 4 bit. GM71C(S)16403C/CL has

realized higher density, higher performance and

various functions by utilizing advanced CMOS

process technology. The GM71C(S)16403C/CL

offers Extended Data Out (EDO) Page Mode as

a high speed access mode. Multiplexed address

inputs permit the GM71C(S)16403C/CL to be

packaged in a standard 300 mil 24(26) pin SOJ,

and a standard 300 mil 24(26) pin plastic TSOP

II. The package size provides high system bit

densities and is compatible with widely

available automated testing and insertion

equipment. System oriented features include

single power supply 5V+/-10% tolerance, direct

interfacing capability with high performance

logic families such as Schottky TTL.

(Unit: ns)

tRAC

tCAC

tHPC

104

124

GM71C(S)16403C/CL-5

GM71C(S)16403C/CL-6

GM71C(S)16403C/CL-7

* Low Power

Active : 605/550/495mW (MAX)

Standby : 11mW (CMOS level : MAX)

: 0.83mW (L-version : MAX)

* RAS Only Refresh, CAS before RAS Refresh,

Hidden Refresh Capability

* All inputs and outputs TTL Compatible

* 4096 Refresh Cycles/64ms

* 4096 Refresh Cycles/128ms (L-version)

* Battery backup operation (L-version)

* Test function : 16bit parallel test mode

Pin Configuration

24(26) SOJ

24(26) TSOP II

VCC

I/O1

I/O2

VSS

VCC

I/O1

I/O2

VSS

I/O4

I/O3

CAS

I/O4

I/O3

CAS

RAS

A11

RAS

A11

A10

VCC

VSS

VCC

VSS

(Top View)

Rev 0.1 / Apr’01

12 3 4 5 6 7...10

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