Datasheet > GLA14

GLA14

更新时间： 2024-02-10 21:55:03

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	133K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GLA14 数据手册

ISSUED DATE :2002/10/28

REVISED DATE :2006/05/10C

GTM

CORPORATION

GLA14

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

Description

The GLA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain.

Package Dimensions

SOT-223

Millimeter

Min. Max.

13°TYP.

REF.

Min.

Max.

7.30

3.10

0.10

10°

6.70

2.90

0.02

0°

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

Unit

Tstg

-55~+150

VCBO

500

VCEO

VEBO

Total Power Dissipation

Electrical Characteristics (Ta = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA, I

BVCEO

BVEBO

C=100uA, I

=10uA, I

CB=30V, I

EB=10V, I

=100mA, I

C=0

CBO

EBO

100

1.5

2.0

*VCE(sat)

*VBE(on)

B=0.1mA

CE=5V, I

=100mA

*hFE

10K

20K

125

=10mA

=100mA

MHz

=10mA, f=100MHz

Cob

CB=10V, IE=0, f=1MHz

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

GLA14

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