Datasheet > GL6718

GL6718

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	180K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GL6718 数据手册

ISSUED DATE :2004/12/17

REVISED DATE :

GTM

CORPORATION

GL6718

N P N E P I TA X I A L P L A N A R T R A N S I S T O R

Description

The GL6718 is designed for general purpose medium power amplifier and switching.

Package Dimensions

SOT-223

Millimeter

REF.

Min.

Max.

7.30

3.10

0.10

10̓

Min.

13̓TYP.

2.30 REF.

Max.

6.70

2.90

0.02

0̓

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

Unit

+150

-55 ~ +150

100

Storage Temperature

Tstg

Collector to Base Voltage at Ta=25к

Collector to Emitter Voltage at Ta=25к

Emitter to Base Voltage at Ta=25к

Collector Current at Ta=25к

VCBO

VCEO

VEBO

100

5.0

1.0

Total Power Dissipation at Ta=25к

1.5

Characteristics at Ta = 25к

Symbol

Min.

100

Typ.

Max.

Unit

Test Conditions

BVCBO

IC=100uA

BVCEO

BVEBO

ICBO

IC=1mA

IE=10uA

100

350

VCB=80V

*VCE(sat)

IC=350Ma, IB=35A

VCE=1V, IC=50mA

VCE=1V, IC=250mA

VCE=1V, IC=500mA

*hFE

100

310

MHz

VCE=10V, IC=50mA, f=100MHz

VCB=10V, f=1MHz

Cob

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

GL6718

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