Datasheet > GL5551

GL5551

更新时间： 2024-11-02 03:39:27

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	177K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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GL5551 数据手册

GTM CORPORATION

Page : 1/2

GL5551

N P N E P I T AX I A L P L A N A R T R A N S I S T O R

Description

he GL5551 is designer for general purpose applications requiring high breakdown voltages.

Package Dimensions

SOT-223

Millimeter

REF.

Millimeter

Min. Max.

13̓TYP.

2.30 REF.

REF.

Min.

6.70

2.90

0.02

0̓

Max.

7.30

3.10

0.10

10̓

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-55 ~ +150

180

Unit

Tstg

VCBO

VCEO

VEBO

160

600

Total Power Dissipation

1.5

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

180

IC=100uA, IE=0

BVCEO

BVEBO

ICBO

160

IC=1.0Ma, IB=0

IE=10uA, IC=0

0.15

0.2

VCB=120V , IE=0

VEB=4V , IC=0

IEBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

hFE1

IC=10mA, IB=1.0mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCE=5V, IC=1mA

VCE=5V, IC=10mA

VCE=5V, IC=50mA

100

hFE2

160

400

hFE3

300

MHz

VCE=10V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1MHz

Cob

Classification Of hFE

Rank

Range

80 - 200

100 - 250

160 - 400

GTM Product Specification

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