Datasheet > GL5401

GL5401

更新时间： 2024-11-02 03:39:27

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	166K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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GL5401 数据手册

GTM CORPORATION

Page : 1/2

GL5401

P N P E P I T AX I A L P L A N A R T R A N S I S T O R

Description

he GL5401 is designer for general purpose applications requiring high breakdown voltages.

Package Dimensions

SOT-223

Millimeter

Min. Max.

13̓TYP.

2.30 REF.

REF.

Min.

Max.

7.30

3.10

0.10

10̓

6.70

2.90

0.02

0̓

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

-160

-150

-5

VCBO

VCEO

VEBO

-600

1.5

Total Power Dissipation

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-160

IC=-100uA, IE =0

IC=-1mA, IB=0

BVCEO

BVEBO

ICBO

-150

-5

IE=-10uA, IC=0

-50

-200

-500

-1

VCB=-120V , IE=0

VEB=-3V , IC=0

IEBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

hFE1

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

VCE=-5V, IC=-50mA

-1

100

hFE2

160

400

hFE3

300

MHz

VCE=-10V, IC=-10mA, f=100MHz

VCB=-10V, IE=0, f=1MHz

Cob

Classification Of hFE

Rank

Range

80 - 200

100 - 240

160 - 400

GTM Product Specification

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