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GL5401 PDF预览

GL5401

更新时间: 2024-11-20 03:39:27
品牌 Logo 应用领域
GTM 晶体晶体管局域网
页数 文件大小 规格书
2页 166K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

GL5401 数据手册

 浏览型号GL5401的Datasheet PDF文件第2页 
GTM CORPORATION  
Page : 1/2  
GL5401  
P N P E P I T AX I A L P L A N A R T R A N S I S T O R  
Description  
T
he GL5401 is designer for general purpose applications requiring high breakdown voltages.  
Package Dimensions  
SOT-223  
Millimeter  
Millimeter  
Min. Max.  
13̓TYP.  
2.30 REF.  
REF.  
REF.  
Min.  
Max.  
7.30  
3.10  
0.10  
10̓  
A
C
D
E
I
6.70  
2.90  
0.02  
0̓  
B
J
1
2
3
4
5
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
H
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Junction Temperature  
Storage Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Tj  
Ratings  
Unit  
ć
ć
V
+150  
Tstg  
-55 ~ +150  
-160  
-150  
-5  
VCBO  
VCEO  
VEBO  
IC  
V
V
-600  
1.5  
mA  
W
Total Power Dissipation  
PD  
Characteristics at Ta = 25к  
Symbol  
Min.  
Typ.  
Max.  
-
Unit  
V
Test Conditions  
BVCBO  
-160  
-
IC=-100uA, IE =0  
IC=-1mA, IB=0  
BVCEO  
BVEBO  
ICBO  
-150  
-
-
V
-5  
-
-
V
IE=-10uA, IC=0  
-
-
-
-50  
-50  
-200  
-500  
-1  
nA  
nA  
mV  
mV  
V
VCB=-120V , IE=0  
VEB=-3V , IC=0  
IEBO  
-
VCE(sat)1  
VCE(sat)2  
VBE(sat)1  
VBE(sat)2  
hFE1  
-
-
IC=-10mA, IB=-1mA  
IC=-50mA, IB=-5mA  
IC=-10mA, IB=-1mA  
IC=-50mA, IB=-5mA  
VCE=-5V, IC=-1mA  
VCE=-5V, IC=-10mA  
VCE=-5V, IC=-50mA  
-
-
-
-
-
-
-1  
V
50  
80  
50  
100  
-
-
-
hFE2  
160  
400  
-
hFE3  
-
-
-
fT  
300  
6
MHz  
pF  
VCE=-10V, IC=-10mA, f=100MHz  
VCB=-10V, IE=0, f=1MHz  
Cob  
Classification Of hFE  
Rank  
A
N
C
Range  
80 - 200  
100 - 240  
160 - 400  
GTM Product Specification  

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