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GL513F PDF预览

GL513F

更新时间: 2024-11-19 22:32:47
品牌 Logo 应用领域
夏普 - SHARP 红外LED光电二极管
页数 文件大小 规格书
4页 48K
描述
TO-18 Type Infrared Emitting Diode

GL513F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TO-18, 2 PINReach Compliance Code:unknown
风险等级:5.82其他特性:HIGH RELIABILITY
配置:SINGLE最大正向电流:0.15 A
JESD-609代码:e3功能数量:1
最高工作温度:125 °C最低工作温度:-40 °C
光电设备类型:INFRARED LED标称输出功率:2.88 mW
峰值波长:950 nm形状:ROUND
尺寸:3 mm端子面层:Tin (Sn)
Base Number Matches:1

GL513F 数据手册

 浏览型号GL513F的Datasheet PDF文件第2页浏览型号GL513F的Datasheet PDF文件第3页浏览型号GL513F的Datasheet PDF文件第4页 
GL514/GL513F  
TO-18 Type Infrared  
Emitting Diode  
GL514/GL513F  
( )  
Unit : mm  
Features  
Outline Dimensions  
1. Output : GL514 Φ e MIN. 3.31mW at  
IF = 100mA  
GL514  
Glass lens  
GL513F  
φ 4.7± 0.1  
φ 4.7± 0.1  
φ 3  
GL513F Φ e MIN. 1.44mW at  
IF = 100mA  
Glass window  
2. Beam angle : GL514 ∆θ : TYP. ± 7˚  
GL513F ∆θ : TYP. ± 50˚  
3. To- 18 type standard package  
4. High reliability, long operation life  
GL514  
GL513F  
2
φ 0.45  
φ 0.45  
Applications  
1. Optoelectronic switches  
2. Smoke detectors  
2.5  
φ 5.7MAX.  
2.5  
φ 5.7MAX.  
1
3. Infrared applied systems  
2
2
1
1
1
2
Cathode  
Anode  
(
)
Ta = 25˚C  
Absolute Maximum Ratings  
Parameter  
Power dissipation  
Symbol  
P
Rating  
250  
Unit  
mW  
mA  
A
Forward current  
*1Peak forward current  
IF  
150  
IFM  
VR  
2
Reverse voltage  
6
V
Operating temperature  
Storage temperature  
*2Soldering temperature  
T opr  
T stg  
T sol  
-
-
40 to + 125  
55 to + 125  
260  
˚C  
˚C  
˚C  
*1 Pulse width<= 200µs  
Duty ratio = 0.01  
*2 For 10 seconds at the position of 1.3mm from the bottom  
face of can package.  
(
)
Ta = 25˚C  
Electro-optical Characteristics  
Parameter  
Forward voltage  
Symbol  
VF  
Conditions  
MIN.  
TYP.  
1.35  
2.75  
-
MAX.  
Unit  
V
IF = 100mA  
IFM = 1.5A  
VR = 5V  
-
1.6  
Peak forward voltage  
Reverse current  
V FM  
IR  
-
4.0  
V
-
100  
µ A  
pF  
Terminal capacitance  
Ct  
V= 0, f= 1MHz  
-
3.31  
1.44  
-
70  
-
GL514  
5.35  
2.88  
950  
45  
10.0  
mW  
mW  
nm  
nm  
*3Radiant flux  
Φ e  
IF = 100mA  
GL513F  
-
-
-
Peak emission wavelength  
Half intensity wavelength  
λ
IF = 100mA  
IF = 100mA  
p
∆ λ  
-
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,  
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”  

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