Datasheet > GK75PI60T6H

GK75PI60T6H

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
11页	674K
描述
PIM IGBT-600V

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中文翻译

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数据手册

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GK75PI60T6H 数据手册

GK75PI60T6H

IGBT Module

Features：

Short Circuit Rated 10μs

Low Saturation Voltage: V_{CE (sat)}= 1.80V @ I_C= 75A ,T_C=25℃

100% RBSOA Tested（2×Ic）

Low Switching Loss

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values (T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

600

±20

T_C= 80℃,

T_C= 25℃

T_J= 150℃

I_C

Continuous Collector Current

I_CM

t_SC

P_D

Repetitive Peak Collector Current

Short Circuit Withstand Time

150

>10

315

μs

T_C= 25℃

T_Jmax=150℃

Maximum Power Dissipation per IGBT

www.njsme.com

Page 1 Rev. 04

05/17/2016

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