Datasheet > GJ3302

GJ3302

更新时间： 2024-11-23 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	238K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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获取价格

数据手册

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GJ3302 数据手册

Pb Free Plating Product

ISSUED DATE :2005/08/24

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

25V

50mꢀ

16A

GJ3302

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ3302 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Low Gate Charge

*Simple Drive Requirement

*Fast Switching

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

±20

Gate-Source Voltage

V_GS

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

Total Power Dissipation

Linear Derating Factor

0.16

-55 ~ +150

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-c

Value

6.4

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

GJ3302

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