GI856

更新时间： 2024-09-17 22:32:47

品牌	Logo	应用领域
威世 - VISHAY		整流二极管开关功效
页数	文件大小	规格书
2页	47K
描述
FAST SWITCHING PLASTIC RECTIFIER

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中文翻译

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技术参数
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GI856 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.82
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.25 V	最大非重复峰值正向电流：	100 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	3 A	最大重复峰值反向电压：	600 V
最大反向恢复时间：	0.2 µs	子类别：	Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

GI856 数据手册

GI850 THRU GI858

FAST SWITCHING PLASTIC RECTIFIER

Reverse Voltage - 50 to 800 Volts

Forward Current - 3.0 Amperes

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

DO-201AD

♦ High surge current capability

♦ Fast switching for high efficiency

1.0 (25.4)

MIN.

♦ Construction utilizes void-free molded plastic technique

♦ High forward current operation

0.210 (5.3)

0.190 (4.8)

DIA.

♦ High temperature soldering guaranteed:

250°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs (2.3kg) tension

0.375 (9.5)

0.285 (7.2)

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.052 (1.32)

1.0 (25.4)

MIN.

0.048 (1.22)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight: 0.04 ounce, 1.1 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

GI850

GI851

100

GI852

200

140

200

250

GI854

400

280

400

450

GI856

600

420

600

650

GI858

800

510

800

880

UNITS

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

100

150

Maximum non-repetitive peak reverse voltage

V_RSM

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=90°C

I_(AV)

3.0

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

I_FSM

100.0

Maximum instantaneous forward voltage at:

3.0A

V_F

1.25

1.10

Volts

9.4A, T_J=175°C

T_A=25°C

T_A=100°C

Maximum DC reverse current

at rated DC blocking voltage

10.0

200

I_R

µA

150

250

300

500

Typical junction capacitance _{(NOTE 1)}

C_J

t_rr

28.0

200.0

2.0

Maximum reverse recovery time _{(NOTE 2)}

Maximum reverse recovery current _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

I_RM(REC)

Amps

R_ΘJA

R_ΘJL

22.0

8.0

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-50 to +150

NOTES:

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(2) Reverse recovery test conditions: I_F=1.0A, V_R=30V, di/dt=50A/µs, and I_rr=10% I_RMfor measurement of t_rr

(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length,

with both leads equally heat sink

4/98

中文翻译

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与GI856相关器件

型号	品牌	获取价格	描述	数据表
GI856/1	VISHAY	获取价格	Rectifier Diode, 1 Element, 3A, 600V V(RRM),
GI856/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GI856/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 3A, 600V V(RRM),
GI856/4E	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GI856/4H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GI856/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GI856/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GI856/56	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GI856/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
GI856/60	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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