Datasheet > GI826/1-E3

GI826/1-E3

更新时间： 2024-11-08 05:46:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	21K
描述
DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode

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GI826/1-E3 数据手册

GI820 thru GI828

Vishay Semiconductors

formerly General Semiconductor

Fast Switching Rectifier

Reverse Voltage 500 to 800 V

Forward Current 5.0 A

Case Style P600

Features

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

• High surge current capability

• High forward current operation

1.0 (25.4)

MIN.

• Fast switching for high efficiency

• Construction utilizes void-free molded plastic technique

• Uniform molded body

0.360 (9.1)

0.340 (8.6)

• High temperature soldering guaranteed:

250°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.360 (9.1)

0.340 (8.6)

Mechanical Data

Case: Void-free molded plastic body

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

0.052 (1.32)

1.0 (25.4)

MIN.

0.048 (1.22)

DIA.

Weight: 0.07 oz., 2.1 g

Packaging codes/options:

1/750 EA. per Bulk Box

4/800 EA. per 13" Reel (52mm Tape)

23/300 EA. per Ammo Box (52mm Tape)

Dimensions in inches and (millimeters)

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

V_RRM

V_RMS

V_DC

GI820

GI821

100

GI822

200

140

200

250

GI824

400

280

400

450

GI826

600

420

600

650

GI828

800

560

800

880

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

100

150

V_RSM

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55°C

I_F(AV)

5.0

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Typical thermal resistance ⁽¹⁾

I_FSM

300

R_ΘJA

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-50 to +150

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Maximum instantaneous forward voltage

at 5.0A

T_J=25°C

T_J=100°C

V_F

1.10

1.05

at 15.7A

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=100°C

1.0

I_R

C_J

t_rr

µA

Typical junction capacitance at 4.0V, 1MHz

300

Maximum reverse recovery time

I_F=1.0A, V_R=30V, di/dt=50A/µs, I_rr= 10% I_RM

200

Maximum reverse recovery current

I_F=1.0A, V_R=30V, di/dt=50A/µs,

I_RM(REC)

2.0

Notes:

(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

Document Number 88629

21-Mar-02

www.vishay.com

中文翻译

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与GI826/1-E3相关器件

型号	品牌	获取价格	描述	数据表
GI826/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 5A, 600V V(RRM),
GI826/23-E3	VISHAY	获取价格	DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
GI826/4	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GI826/4-E3	VISHAY	获取价格	DIODE 5 A, 600 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode
GI826/4H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GI826/51	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GI826/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GI826/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GI826/62	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN
GI826/64	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN

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