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GI822/1-E3 PDF预览

GI822/1-E3

更新时间: 2024-09-18 20:00:07
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
2页 21K
描述
DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode

GI822/1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.2 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GI822/1-E3 数据手册

 浏览型号GI822/1-E3的Datasheet PDF文件第2页 
GI820 thru GI828  
Vishay Semiconductors  
formerly General Semiconductor  
Fast Switching Rectifier  
Reverse Voltage 500 to 800 V  
Forward Current 5.0 A  
Case Style P600  
Features  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
• High surge current capability  
• High forward current operation  
1.0 (25.4)  
MIN.  
• Fast switching for high efficiency  
• Construction utilizes void-free molded plastic technique  
• Uniform molded body  
0.360 (9.1)  
0.340 (8.6)  
• High temperature soldering guaranteed:  
250°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.360 (9.1)  
0.340 (8.6)  
Mechanical Data  
Case: Void-free molded plastic body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
0.052 (1.32)  
1.0 (25.4)  
MIN.  
0.048 (1.22)  
DIA.  
Weight: 0.07 oz., 2.1 g  
Packaging codes/options:  
1/750 EA. per Bulk Box  
4/800 EA. per 13" Reel (52mm Tape)  
23/300 EA. per Ammo Box (52mm Tape)  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
GI820  
GI821  
100  
70  
GI822  
200  
140  
200  
250  
GI824  
400  
280  
400  
450  
GI826  
600  
420  
600  
650  
GI828  
800  
560  
800  
880  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
V
35  
V
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
50  
100  
150  
V
VRSM  
75  
V
Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=55°C  
IF(AV)  
5.0  
A
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Typical thermal resistance (1)  
IFSM  
300  
10  
A
RΘJA  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-50 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward voltage  
at 5.0A  
TJ=25°C  
TJ=100°C  
VF  
1.10  
1.05  
V
at 15.7A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=100°C  
10  
1.0  
IR  
CJ  
trr  
µA  
pF  
ns  
Typical junction capacitance at 4.0V, 1MHz  
300  
Maximum reverse recovery time  
IF=1.0A, VR=30V, di/dt=50A/µs, Irr = 10% IRM  
200  
Maximum reverse recovery current  
IF=1.0A, VR=30V, di/dt=50A/µs,  
IRM(REC)  
2.0  
ns  
Notes:  
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted  
Document Number 88629  
21-Mar-02  
www.vishay.com  
1

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