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GI750-E3/93 PDF预览

GI750-E3/93

更新时间: 2024-02-19 17:05:30
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 334K
描述
DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE P600, 2 PIN, Rectifier Diode

GI750-E3/93 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.62其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:400 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:2.5 µs表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

GI750-E3/93 数据手册

 浏览型号GI750-E3/93的Datasheet PDF文件第2页浏览型号GI750-E3/93的Datasheet PDF文件第3页浏览型号GI750-E3/93的Datasheet PDF文件第4页 
GI750 thru GI758  
Vishay General Semiconductor  
High Current Axial Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
VF  
6.0 A  
50 V to 800 V  
400 A  
0.9 V, 0.95 V  
5.0 µA  
IR  
Tj max.  
150 °C  
Case Style P600  
Features  
Mechanical Data  
• Low forward voltage drop  
Case: P600, void-free molded epoxy body  
• Low leakage current, I less than 0.1µA  
Epoxy meets UL-94V-0 Flammability rating  
R
• High forward current capability  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
GI750 GI751 GI752 GI754 GI756 GI758  
Unit  
V
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
60  
100  
70  
200  
140  
200  
240  
400  
280  
400  
480  
600  
420  
600  
720  
800  
560  
Maximum RMS voltage  
V
V
V
A
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
100  
120  
800  
VRSM  
IF(AV)  
1200  
Maximum average forward rectified current at TA = 60 °C,  
P.C.B. mounting (fig. 1) TL = 60 °C, 0.125" (3.18 mm) lead  
length (fig. 2)  
6.0  
22  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
400  
A
Operating junction and storage temperature range  
TJ,TSTG  
- 50 to + 150  
°C  
Document Number 88627  
30-Aug-05  
www.vishay.com  
1

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