Datasheet > GI1952

GI1952

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体开关晶体管
页数	文件大小	规格书
3页	383K
描述
PNP HIGH SPEED SWITCHING TRANSISTOR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GI1952 数据手册

ISSUED DATE :2005/10/03

REVISED DATE :

GTM

CORPORATION

1952

P N P H I G H S P E E D S W I T C H I N G T R A N S I S T O R

Description

The GI1952 is designed for high speed switching applications.

Features

ԦLow saturation voltage, typically VCE(sat) =-0.2V at I

B=-3A/-0.15A

ԦHigh speed switching, typically tf =0.15ꢀs at I

ԦWide SOA

C=-3A

ԦComplements to GI5103

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

0.50

2.20

0.45

0.90

5.40

2.30 REF.

0.60

0.90

Absolute Maximum Ratings (T

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

=25к)

Symbol

Ratings

-100

-60

-5

-10

Unit

CBO

CEO

EBO

Collector Current (Pulse)

Total Device Dissipation (T

Junction Temperature

=25к)

150

Storage Temperature

Tstg

-55 ~ +150

Electrical Characteristics (TA = 25к unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

-100

-60

-5

=-50uA, I

=-1mA, I

=-50uA, I

B=0

CBO

-10

-0.3

-0.5

-1.2

-1.5

270

CB=-100V, I

E=0

EBO

VEB=-5V, I =0

*VCE(sat)

*VBE(sat)

*hFE

=-3A, I

=-4A, I

=-3A, I

=-4A, I

B=-0.15A

B=-0.2A

B=-0.15A

B=-0.2A

120

CE=-2V, I

CE=-10V, I

CB=-10V, I

=-1A

=-3A

130

MHz

=0.5A, f=30MHz

=0, f=1MHz

Cob

I1952

Page: 1/3

12 3

下载PDF

与GI1952相关器件

型号	品牌	描述	获取价格	数据表
GI20N03	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GI20P02	GTM	P-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GI20T03	GTM	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	获取价格
GI2401	VISHAY	GLASS PASSIVATED PLASTIC RECTIFIER	获取价格
GI2401-E3-45	VISHAY	Dual Common-Cathode Ultrafast Plastic Rectifier	获取价格
GI2401HE3/45	VISHAY	DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re	获取价格