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GI1-1200GP/62 PDF预览

GI1-1200GP/62

更新时间： 2024-01-16 10:56:56
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
3页 56K
描述
Rectifier Diode, 1 Element, 1A, 1200V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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GI1-1200GP/62 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-15包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.79其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-204ACJESD-30 代码：O-PALF-W2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：1200 V
最大反向恢复时间：25 µs表面贴装：NO
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

GI1-1200GP/62 数据手册

 浏览型号GI1-1200GP/62的Datasheet PDF文件第2页浏览型号GI1-1200GP/62的Datasheet PDF文件第3页 
GI1-1200GP thru GI1-1600GP  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Miniature High Voltage  
Glass Passivated Rectifier  
Reverse Voltage 1200 to 1600 V  
Forward Current 1.0 A  
DO-204AC (DO-15)  
Features  
• Plastic package has Underwriters Laboratory  
0.034 (0.86)  
0.028 (0.71)  
Dia.  
Flammability Classification 94V-0.  
• High temperature metallurgically bonded construction  
• Cavity-free glass passivated junction  
• 1.0 ampere operation at TA=75°C with no thermal runaway  
• Typical IR less than 0.1µA  
1.0 (25.4)  
min.  
• Hermetically sealed package  
• Capable of meeting environmental standards of  
MIL-S-19500  
0.300 (7.6)  
0.230 (5.8)  
• High temperature soldering guaranteed: 350°C/10 seconds,  
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension  
0.140 (3.6)  
0.104 (2.6)  
Dia.  
Mechanical Data  
Case: JEDEC DO-204AC, molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
®
.0 (25.4)  
min.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.015 oz., 0.4 g  
*Glass-plastic encapsulation technique is covered by  
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306.  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
GI1-1200GP GI1-1400GP GI1-1600GP  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
1200  
840  
1400  
980  
1600  
1120  
1600  
V
V
Maximum DC blocking voltage  
1200  
1400  
V
Maximum average forward rectified current  
0.375” (9.5mm) lead length at TA=75°C  
IF(AV  
)
1.0  
30  
A
A
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
Typical thermal resistance (1)  
RΘJA  
55  
°C/W  
°C  
Operating junction and storage temperature range  
TJ,TSTG  
-65 to +175  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
GI1-1200GP GI1-1400GP GI1-1600GP  
Unit  
Maximum instantaneous forward voltage  
at 1.0A  
at 3.14A  
1.1  
1.3  
VF  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TA= 25°C  
TA=100°C  
10  
IR  
trr  
trr  
µA  
µs  
µs  
100  
Maximum reverse recovery time at IFM=20mA, IRM=2mA  
25  
Maximum reverse recovery time  
at IF=0.5A, IR=1.0A, Irr=0.25A  
typical  
0.7  
1.5  
maximum  
Maximum forward recovery time at IFM=20mA  
Typical junction capacitance at 4.0V, 1MHz  
tfr  
1.0  
15  
µs  
CJ  
pF  
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted  
Document Number 88622  
03-Jan-03  
www.vishay.com  
1
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