Datasheet > GF4800

GF4800

更新时间： 2024-11-18 23:53:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	159K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 9A I(D) \| SO

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中文翻译

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数据手册

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GF4800 数据手册

GF4800

N-Channel Enhancement-Mode MOSFET

30V R

18.5 Ω I 9A

DS(ON)

SO-8

0.197 (5.00)

0.189 (4.80)

0.157 (3.99)

0.150 (3.81)

0.244 (6.20)

0.228 (5.79)

0.05 (1.27)

0.04 (1.02)

Dimensions in inches

and (millimeters)

0.165 (4.19)

0.155 (3.94)

0.245 (6.22)

Min.

0.019 (0.48)

x 45°

0.020 (0.51)

0.013 (0.33)

0.010 (0.25)

0.009 (0.23)

0.007 (0.18)

0.050 (1.27)

0.035 (0.889)

0.050 typ.

(1.27)

0.069 (1.75)

0.053 (1.35)

0.025 (0.635)

Mounting Pad Layout

0.050(1.27)

0.016 (0.41)

0°– 8°

0.009 (0.23)

0.004 (0.10)

Mechanical Data

Features

Case: SO-8 molded plastic body

• Advanced Trench Process Technology

Terminals: Leads solderable per MIL-STD-750,

Method 2026

• High Density Cell Design for Ultra Low

On-Resistance

High temperature soldering guaranteed:

250°C/10 seconds at terminals

• Specially Designed for Low Voltage DC/DC

Converters

Mounting Position: Any

Weight: 0.5g

• Fast Switching for High Efficiency

• Reduced Gate Charge

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

Continuous Drain Current

T_J= 150°C⁽¹⁾

T_A= 25°C

T_A= 70°C

I_D

Pulsed Drain Current

I_DM

P_D

T_A= 25°C

T_A= 70°C

2.5

1.6

Maximum Power Dissipation⁽¹⁾

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient⁽¹⁾Thermal Resistance

T_J, T_stg

R_θJA

–55 to 150

°C

°C/W

Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec.

7/10/01

12 3 4 5

中文翻译

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