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GF40HF120T1VH PDF预览

GF40HF120T1VH

更新时间: 2024-11-20 17:15:39
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
9页 342K
描述
IGBT Half Bridge-1200V

GF40HF120T1VH 数据手册

 浏览型号GF40HF120T1VH的Datasheet PDF文件第2页浏览型号GF40HF120T1VH的Datasheet PDF文件第3页浏览型号GF40HF120T1VH的Datasheet PDF文件第4页浏览型号GF40HF120T1VH的Datasheet PDF文件第5页浏览型号GF40HF120T1VH的Datasheet PDF文件第6页浏览型号GF40HF120T1VH的Datasheet PDF文件第7页 
GF40HF120T1VH  
IGBT Module  
Features  
Circuit Diagram  
Non Punch Through (NPT) Technology  
Short Circuit Rated >10μs  
Low Saturation Voltage  
Low Switching Loss  
100% RBSOA Tested(2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Applications:  
Welding MachineCutting Machine  
Plating Power SupplyInduction Heating  
SMPSUPS  
Maximum Rated Values of IGBT (TC=25unless otherwise specified)  
VCES  
VGES  
Collector-Emitter Blocking Voltage  
Gate-Emitter Voltage  
1200  
±20  
40  
V
V
TC=80℃  
TC=25℃  
TJ=150℃  
A
IC  
Continuous Collector Current  
80  
A
ICM  
tSC  
PD  
Repetitive Peak Collector Current  
Short Circuit Withstand Time  
80  
A
>10  
378  
μs  
W
TC=25  
TJmax=150℃  
Maximum Power Dissipation per leg  
www.njsme.com  
2022 NJSME All rights reserved  
SZU  
Page 1 REV.A  
02/21/2022  

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