Datasheet > GF3GB

GF3GB

更新时间： 2024-09-25 14:51:27

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	127K
描述
Rectifier device Common rectifier diodes

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GF3GB 数据手册

GF3AB - GF3MB

SURFACE MOUNT RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 3.0 A

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop

Low Power Loss

Built-in Strain Relief

Plastic Case Material has UL Flammability

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SMB(DO-214AA)

Classification Rating 94V-O

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteri

Symbol

Unit

GF3AB GF3BB GF3DB GF3GB GF3JB GF3KB GF3MB

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

200

140

400

600

420

800

560

1000

700

R(RMS)

RMS Reverse Voltage

280

3.0

Average Rectified Output Current @T_L= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

100

Forward Voltage

@I_F= 3.0A

1.20

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

250

µA

Reverse Recovery Time (Note 1)

2.5

µS

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

R^ꢀ

°C/W

°C

j, STG

T T

-65 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

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