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GF2304/E9 PDF预览

GF2304/E9

更新时间: 2024-02-26 21:32:43
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
5页 104K
描述
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

GF2304/E9 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):2.5 A
最大漏源导通电阻:0.117 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

GF2304/E9 数据手册

 浏览型号GF2304/E9的Datasheet PDF文件第2页浏览型号GF2304/E9的Datasheet PDF文件第3页浏览型号GF2304/E9的Datasheet PDF文件第4页浏览型号GF2304/E9的Datasheet PDF文件第5页 
GF2304  
N-Channel Enhancement-Mode MOSFET  
V
DS  
30V R 0.117I 2.5A  
DS(ON) D  
TO-236AB (SOT-23)  
.122 (3.1)  
.110 (2.8)  
.016 (0.4)  
Top View  
3
Mounting Pad Layout  
0.037 (0.95)  
0.037 (0.95)  
Pin Configuration  
1. Gate  
1
2
2. Source  
3. Drain  
0.079 (2.0)  
.037(0.95)  
.037(0.95)  
0.035 (0.9)  
0.031 (0.8)  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Dimensions in inches and (millimeters)  
Features  
Mechanical Data  
• Advanced trench process technology  
• High density cell design for ultra-low on-resistance  
• Popular SOT-23 package with copper lead-frame  
for superior thermal and electrical capabilities  
• Compact and low profile  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008g  
Marking Code: 04  
Packaging Codes – Options:  
E8 – 10K per 13” reel (8mm tape), 30K/box  
E9 – 3K per 7” reel (8mm tape), 30K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Unit  
V
Drain-Source Voltage  
30  
±
Gate-Source-Voltage  
20  
V
Continuous Drain Current TJ = 150°C TA = 25°C  
Pulsed Drain Current(1)  
2.5  
10  
A
IDM  
A
Maximum Power Dissipation(2)  
TA = 25°C  
TA = 70°C  
1.25  
0.80  
PD  
W
Operating Junction and Storage Temperature Range  
Maximum Junction-to-Ambient Thermal Resistance(2)  
TJ, Tstg  
RθJA  
–55 to +150  
100  
°C  
°C/W  
Notes:  
(1) Pulse width limited by maximum junction temperature.  
(2) Surface mounted on FR4 board, (1” x 1”, 2oz. Cu)  
2/5/01  

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