生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 2.5 A |
最大漏源导通电阻: | 0.117 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GF2304/E9 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |
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GF235 | TAITRON |
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0.2A High Voltage Fast Recovery Rectifiers |
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GF240 | TAITRON |
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0.2A High Voltage Fast Recovery Rectifiers |
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GF2400001 | DIODES |
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Parallel - Fundamental Quartz Crystal, 24MHz Nom, SMD, 2 PIN |
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GF2402 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 1.14A I(D) | SOT-23 |
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GF2402/E8 | VISHAY |
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Small Signal Field-Effect Transistor, 1.14A I(D), 20V, 1-Element, N-Channel, Silicon, Meta |
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GF2402/E9 | VISHAY |
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Small Signal Field-Effect Transistor, 1.14A I(D), 20V, 1-Element, N-Channel, Silicon, Meta |
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GF250 | TAITRON |
获取价格 |
0.2A High Voltage Fast Recovery Rectifiers |
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GF2500023Z | DIODES |
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Parallel - Fundamental Quartz Crystal, 25MHz Nom, SMD, 2 PIN |
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GF2524 | ETC |
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TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | SO |
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