Datasheet > GF2301

GF2301

更新时间： 2024-09-24 23:53:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	138K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 20V V(BR)DSS \| 2.3A I(D) \| SOT-23

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GF2301 数据手册

GF2301

P-Channel Enhancement-Mode MOSFET

Low V

V -20V R

0.13Ω I -2.3A

DS(ON) D

GS(th)

TO-236AB (SOT-23)

.118 (3.0)

.110 (2.8)

0.031 (0.8)

.020 (0.51)

.015 (0.37)

Top View

0.035 (0.9)

Pin Configuration

1. Gate

0.079 (2.0)

2. Source

3. Drain

0.037 (0.95)

Dimensions in inches

and (millimeters)

.041 (1.03) .041 (1.03)

.035 (0.89) .035 (0.89)

Mounting Pad Layout

.098 (2.5)

.091 (2.3)

.020 (0.51) .020 (0.51)

.015 (0.37) .015 (0.37)

Mechanical Data

Features

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

Marking Code: 01

• Advanced Trench Process Technology

• High density cell design for ultra-low on-resistance

• Popular SOT-23 package with copper lead frame

for superior thermal and electrical capabilities

• Compact and low profile

• –2.5V rated

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source-Voltage

V_DS

–20

V_GS

Continuous Drain Current

T_J= 150°C

T_A= 25°C

T_A= 70°C

–2.3

–1.5

I_D

(1)

Pulsed Drain Current

I_DM

P_D

–10

T_A= 25°C

T_A= 70°C

1.25

0.8

Maximum Power Dissipation ⁽²⁾

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient Thermal Resistance⁽²⁾

T_J, T_stg

R_θJA

–55 to +150

°C

100

°C/W

Note:

(1) Pulse width limited by maximum junction temperature.

(2) Surface mounted on FR4 board, t ≤ 5 sec.

7/11/01

12 3 4

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